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Physical Review Letters
|
April 20, 2004
Negative band gaps in dilute InNxSb1-x alloys
T D Veal, I Mahboob, C F McConville
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
August 10, 2011
Unintentional conductivity of indium nitride: transport modelling and microscopic origins
P D C King, T D Veal, C F McConville
Physical Review Letters
|
February 3, 2004
Intrinsic electron accumulation at clean InN surfaces
I Mahboob, T D Veal, C F McConville, et al.
Rapid Communications in Mass Spectrometry : RCM
|
June 17, 2010
Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement
R J H Morris, M G Dowsett, R Beanland, et al.
Physical Review Letters
|
October 15, 2008
Surface electron accumulation and the charge neutrality level in In2O3
P D C King, T D Veal, D J Payne, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
August 5, 2011
Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111)
K H L Zhang, V K Lazarov, T D Veal, et al.
Physical Review Letters
|
February 2, 2013
Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants
W M Linhart, J Chai, R J H Morris, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
August 6, 2011
The donor nature of muonium in undoped, heavily n-type and p-type InAs
P D C King, T D Veal, C F McConville, et al.
Physical Review Letters
|
September 28, 2010
Surface band-gap narrowing in quantized electron accumulation layers
P D C King, T D Veal, C F McConville, et al.
Scientific Reports
|
January 17, 2015
Structural, optical and vibrational properties of self-assembled Pbn+1(Ti1-x Fex)nO(3n+1)-δ Ruddlesden-Popper superstructures
K I Doig, J J P Peters, S Nawaz, et al.
Page
of 2
Search research articles
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Showing results (1-10 of 11) with videos related to
Sort By:
Page
of 2
Physical Review Letters
|
April 20, 2004
Negative band gaps in dilute InNxSb1-x alloys
T D Veal, I Mahboob, C F McConville
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
August 10, 2011
Unintentional conductivity of indium nitride: transport modelling and microscopic origins
P D C King, T D Veal, C F McConville
Physical Review Letters
|
February 3, 2004
Intrinsic electron accumulation at clean InN surfaces
I Mahboob, T D Veal, C F McConville, et al.
Rapid Communications in Mass Spectrometry : RCM
|
June 17, 2010
Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement
R J H Morris, M G Dowsett, R Beanland, et al.
Physical Review Letters
|
October 15, 2008
Surface electron accumulation and the charge neutrality level in In2O3
P D C King, T D Veal, D J Payne, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
August 5, 2011
Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111)
K H L Zhang, V K Lazarov, T D Veal, et al.
Physical Review Letters
|
February 2, 2013
Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants
W M Linhart, J Chai, R J H Morris, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
August 6, 2011
The donor nature of muonium in undoped, heavily n-type and p-type InAs
P D C King, T D Veal, C F McConville, et al.
Physical Review Letters
|
September 28, 2010
Surface band-gap narrowing in quantized electron accumulation layers
P D C King, T D Veal, C F McConville, et al.
Scientific Reports
|
January 17, 2015
Structural, optical and vibrational properties of self-assembled Pbn+1(Ti1-x Fex)nO(3n+1)-δ Ruddlesden-Popper superstructures
K I Doig, J J P Peters, S Nawaz, et al.
Page
of 2