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Optics Express|October 14, 2022
Optical net gain measurement on Al0.07Ga0.93N/GaN multi-quantum wellsQuang Minh Thai, Sergi Cuesta, Lou Denaix, et al.Nanotechnology|April 6, 2018
Dopant radial inhomogeneity in Mg-doped GaN nanowiresAlexandra-Madalina Siladie, Lynda Amichi, Nicolas Mollard, et al.Nanotechnology|November 4, 2020
The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubesBruno Daudin, Alexandra-Madalina Siladie, Marion Gruart, et al.Optics Express|May 14, 2021
AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasersSergi Cuesta, Yoann Curé, Fabrice Donatini, et al.Nanotechnology|April 5, 2016
InGaN nanowires with high InN molar fraction: growth, structural and optical propertiesXin Zhang, Hugo Lourenço-Martins, Sophie Meuret, et al.Nanotechnology|September 9, 2020
Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxyBruno Daudin, Fabrice Donatini, Catherine Bougerol, et al.Nano Letters|June 18, 2019
Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?Hadi Hijazi, Guillaume Monier, Evelyne Gil, et al.Nano Letters|October 5, 2011
M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devicesRobert Koester, Jun-Seok Hwang, Damien Salomon, et al.ACS Applied Materials & Interfaces|September 13, 2016
Flexible Photodiodes Based on Nitride Core/Shell p-n Junction NanowiresHezhi Zhang, Xing Dai, Nan Guan, et al.Pageof 3