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The Journal of Chemical Physics|November 14, 2023
Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasmaChandreswar Mahata, Hyojin So, Seyeong Yang, et al.
Nanomaterials (Basel, Switzerland)|January 30, 2021
Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic DeviceSobia Ali Khan, Geun Ho Lee, Chandreswar Mahata, et al.
The Journal of Chemical Physics|October 1, 2024
Enhanced analog switching and neuromorphic performance of ZnO-based memristors with indium tin oxide electrodes for high-accuracy pattern recognitionMuhammad Ismail, Maria Rasheed, Yongjin Park, et al.
ACS Applied Materials & Interfaces|April 25, 2013
Comparative study of atomic-layer-deposited stacked (HfO2/Al2O3) and nanolaminated (HfAlOx) dielectrics on In0.53Ga0.47AsChandreswar Mahata, Young-Chul Byun, Chee-Hong An, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 3, 2025
Hybrid WS<sub>2</sub>-Based Memristor With Tunable Conductance Modulation for Neuromorphic and Nociceptive LearningMuhammad Ismail, Hyesung Na, Youngseo Lee, et al.
Nanomaterials (Basel, Switzerland)|March 29, 2017
Textile-Based Electronic Components for Energy Applications: Principles, Problems, and PerspectiveVishakha Kaushik, Jaehong Lee, Juree Hong, et al.
RSC Advances|April 18, 2022
Improved resistive switching characteristics of a multi-stacked HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> RRAM structure for neuromorphic and synaptic applications: experimental and computational studyEjaz Ahmad Khera, Chandreswar Mahata, Muhammad Imran, et al.
ACS Applied Materials & Interfaces|May 15, 2014
Capillary force-induced glue-free printing of Ag nanoparticle arrays for highly sensitive SERS substratesJaehong Lee, Jungmok Seo, Dayeong Kim, et al.
Nanomaterials (Basel, Switzerland)|May 28, 2020
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si SubstrateMehr Khalid Rahmani, Min-Hwi Kim, Fayyaz Hussain, et al.
Nanoscale|August 23, 2023
Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systemsSeyeong Yang, Taegyun Kim, Sunghun Kim, et al.
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