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Changchun Chai

Showing results (11-20 of 22) with videos related to

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Materials (Basel, Switzerland)|April 25, 2020
Penta-C<sub>20</sub>: A Superhard Direct Band Gap Carbon Allotrope Composed of Carbon PentagonWei Zhang, Changchun Chai, Qingyang Fan, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 16, 2020
Six novel carbon and silicon allotropes with their potential application in photovoltaic fieldWei Zhang, Changchun Chai, Qingyang Fan, et al.
Materials (Basel, Switzerland)|February 9, 2020
First-Principles Study on Structural, Mechanical, Anisotropic, Electronic and Thermal Properties of III-Phosphides: <i>X</i>P (<i>X</i> = Al, Ga, or In) in the <i>P</i>6<sub>4</sub>22 PhaseJunjie Miao, Changchun Chai, Wei Zhang, et al.
Materials (Basel, Switzerland)|August 5, 2017
A Novel Silicon Allotrope in the Monoclinic PhaseChaogang Bai, Changchun Chai, Qingyang Fan, et al.
Materials (Basel, Switzerland)|August 5, 2017
Correction: A Novel Silicon Allotrope in the Monoclinic Phase. Materials 2017, 10, 441Chaogang Bai, Changchun Chai, Qingyang Fan, et al.
Materials (Basel, Switzerland)|August 5, 2017
Si<sub>96</sub>: A New Silicon Allotrope with Interesting Physical PropertiesQingyang Fan, Changchun Chai, Qun Wei, et al.
Micromachines|March 29, 2023
Study on ESD Protection Circuit by TCAD Simulation and TLP ExperimentFuxing Li, Changchun Chai, Yuqian Liu, et al.
Micromachines|August 26, 2022
Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic PulseLei Wang, Changchun Chai, Tianlong Zhao, et al.
Micromachines|January 21, 2022
Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMTYingshuo Qin, Changchun Chai, Fuxing Li, et al.
Materials (Basel, Switzerland)|July 26, 2020
First-Principles Study on III-Nitride Polymorphs: AlN/GaN/InN in the <i>Pmn</i>2<sub>1</sub> PhaseZheren Zhang, Changchun Chai, Wei Zhang, et al.
Pageof 3

Showing results (11-20 of 22) with videos related to

Sort By:
Pageof 3
Materials (Basel, Switzerland)|April 25, 2020
Penta-C<sub>20</sub>: A Superhard Direct Band Gap Carbon Allotrope Composed of Carbon PentagonWei Zhang, Changchun Chai, Qingyang Fan, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 16, 2020
Six novel carbon and silicon allotropes with their potential application in photovoltaic fieldWei Zhang, Changchun Chai, Qingyang Fan, et al.
Materials (Basel, Switzerland)|February 9, 2020
First-Principles Study on Structural, Mechanical, Anisotropic, Electronic and Thermal Properties of III-Phosphides: <i>X</i>P (<i>X</i> = Al, Ga, or In) in the <i>P</i>6<sub>4</sub>22 PhaseJunjie Miao, Changchun Chai, Wei Zhang, et al.
Materials (Basel, Switzerland)|August 5, 2017
A Novel Silicon Allotrope in the Monoclinic PhaseChaogang Bai, Changchun Chai, Qingyang Fan, et al.
Materials (Basel, Switzerland)|August 5, 2017
Correction: A Novel Silicon Allotrope in the Monoclinic Phase. Materials 2017, 10, 441Chaogang Bai, Changchun Chai, Qingyang Fan, et al.
Materials (Basel, Switzerland)|August 5, 2017
Si<sub>96</sub>: A New Silicon Allotrope with Interesting Physical PropertiesQingyang Fan, Changchun Chai, Qun Wei, et al.
Micromachines|March 29, 2023
Study on ESD Protection Circuit by TCAD Simulation and TLP ExperimentFuxing Li, Changchun Chai, Yuqian Liu, et al.
Micromachines|August 26, 2022
Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic PulseLei Wang, Changchun Chai, Tianlong Zhao, et al.
Micromachines|January 21, 2022
Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMTYingshuo Qin, Changchun Chai, Fuxing Li, et al.
Materials (Basel, Switzerland)|July 26, 2020
First-Principles Study on III-Nitride Polymorphs: AlN/GaN/InN in the <i>Pmn</i>2<sub>1</sub> PhaseZheren Zhang, Changchun Chai, Wei Zhang, et al.
Pageof 3