Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Changhwan Choi

Showing results (1-10 of 29) with videos related to

Pageof 3
Sort By:
Nanotechnology|February 28, 2022
Improved analog switching characteristics of Ta<sub>2</sub>O<sub>5</sub>-based memristor using indium tin oxide buffer layer for neuromorphic computingTae Sung Lee, Changhwan Choi
Scientific Reports|October 25, 2019
Highly Sensitive and Full Range Detectable Humidity Sensor using PEDOT:PSS, Methyl Red and Graphene Oxide MaterialsGul Hassan, Memoon Sajid, Changhwan Choi
Nanoscale Horizons|March 20, 2024
Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defectsYu-Rim Jeon, Deji Akinwande, Changhwan Choi
Nanotechnology|June 29, 2022
Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO<sub>2</sub>thin filmBoncheol Ku, Yue Ma, Hoonhee Han, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|June 17, 2024
The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non-Volatile DevicesYu-Rim Jeon, Donguk Seo, Yoonmyung Lee, et al.
ACS Applied Materials & Interfaces|December 2, 2023
Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO<sub>2</sub> (La:HfO<sub>2</sub>) and TaN-Based Artificial SynapsesYu-Rim Jeon, Duho Kim, Boncheol Ku, et al.
Nanoscale|February 12, 2025
Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/HfO<sub>2</sub>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> laminated thin films and CF<sub>4</sub> plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistorsKyungsoo Park, Chulwon Chung, Boncheol Ku, et al.
Nanoscale|April 3, 2025
Grain size engineering <i>via</i> a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> seed layer for FeFET memory and synaptic devicesJunhyeok Park, Chulwon Chung, Boncheol Ku, et al.
Journal of Nanoscience and Nanotechnology|November 20, 2013
RF-magnetron sputtered kesterite Cu2ZnSnS4 thin film using single quaternary sputtering target prepared by sintering processDongjun Yoo, Moonsuk Choi, Seung Chan Heo, et al.
Nanoscale|July 12, 2019
Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO<sub>2</sub> thin films for complementary and bipolar switching characteristicsYawar Abbas, Rohan B Ambade, Swapnil B Ambade, et al.
Pageof 3

Showing results (1-10 of 29) with videos related to

Sort By:
Pageof 3
Nanotechnology|February 28, 2022
Improved analog switching characteristics of Ta<sub>2</sub>O<sub>5</sub>-based memristor using indium tin oxide buffer layer for neuromorphic computingTae Sung Lee, Changhwan Choi
Scientific Reports|October 25, 2019
Highly Sensitive and Full Range Detectable Humidity Sensor using PEDOT:PSS, Methyl Red and Graphene Oxide MaterialsGul Hassan, Memoon Sajid, Changhwan Choi
Nanoscale Horizons|March 20, 2024
Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defectsYu-Rim Jeon, Deji Akinwande, Changhwan Choi
Nanotechnology|June 29, 2022
Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO<sub>2</sub>thin filmBoncheol Ku, Yue Ma, Hoonhee Han, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|June 17, 2024
The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non-Volatile DevicesYu-Rim Jeon, Donguk Seo, Yoonmyung Lee, et al.
ACS Applied Materials & Interfaces|December 2, 2023
Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO<sub>2</sub> (La:HfO<sub>2</sub>) and TaN-Based Artificial SynapsesYu-Rim Jeon, Duho Kim, Boncheol Ku, et al.
Nanoscale|February 12, 2025
Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/HfO<sub>2</sub>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> laminated thin films and CF<sub>4</sub> plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistorsKyungsoo Park, Chulwon Chung, Boncheol Ku, et al.
Nanoscale|April 3, 2025
Grain size engineering <i>via</i> a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> seed layer for FeFET memory and synaptic devicesJunhyeok Park, Chulwon Chung, Boncheol Ku, et al.
Journal of Nanoscience and Nanotechnology|November 20, 2013
RF-magnetron sputtered kesterite Cu2ZnSnS4 thin film using single quaternary sputtering target prepared by sintering processDongjun Yoo, Moonsuk Choi, Seung Chan Heo, et al.
Nanoscale|July 12, 2019
Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO<sub>2</sub> thin films for complementary and bipolar switching characteristicsYawar Abbas, Rohan B Ambade, Swapnil B Ambade, et al.
Pageof 3