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Nanomaterials (Basel, Switzerland)
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May 28, 2022
Ion-Movement-Based Synaptic Device for Brain-Inspired Computing
Chansoo Yoon, Gwangtaek Oh, Bae Ho Park
ACS Applied Materials & Interfaces
|
December 16, 2016
Direct Observation of Domain Motion Synchronized with Resistive Switching in Multiferroic Thin Films
Ji Hye Lee, Chansoo Yoon, Sangik Lee, et al.
Scientific Reports
|
June 9, 2016
Real-time device-scale imaging of conducting filament dynamics in resistive switching materials
Keundong Lee, Youngbin Tchoe, Hosang Yoon, et al.
Nano Letters
|
February 24, 2017
Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction
Chansoo Yoon, Ji Hye Lee, Sangik Lee, et al.
Scientific Reports
|
November 4, 2014
Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique
Sangik Lee, Inrok Hwang, Sungtaek Oh, et al.
Nanotechnology
|
March 18, 2017
Flexible resistive random access memory devices by using NiO <sub>x</sub> /GaN microdisk arrays fabricated on graphene films
Keundong Lee, Jong-Woo Park, Youngbin Tchoe, et al.
ACS Applied Materials & Interfaces
|
May 17, 2018
Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers
Sangik Lee, Chansoo Yoon, Ji Hye Lee, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
December 5, 2025
Dual Bipolar Resistive Switching in Wafer-Scalable 2D Perovskite Oxide Nanosheets-Based Memristor
Sohwi Kim, Chansoo Yoon, Haena Yim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
May 25, 2022
Progressive and Stable Synaptic Plasticity with Femtojoule Energy Consumption by the Interface Engineering of a Metal/Ferroelectric/Semiconductor
Sohwi Kim, Chansoo Yoon, Gwangtaek Oh, et al.
Nano Letters
|
July 6, 2023
Heterosynaptic Plasticity in a Vertical Two-Terminal Synaptic Device
Haena Yim, Chansoo Yoon, Ahrom Ryu, et al.
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Search research articles
Search
Showing results (1-10 of 11) with videos related to
Sort By:
Page
of 2
Nanomaterials (Basel, Switzerland)
|
May 28, 2022
Ion-Movement-Based Synaptic Device for Brain-Inspired Computing
Chansoo Yoon, Gwangtaek Oh, Bae Ho Park
ACS Applied Materials & Interfaces
|
December 16, 2016
Direct Observation of Domain Motion Synchronized with Resistive Switching in Multiferroic Thin Films
Ji Hye Lee, Chansoo Yoon, Sangik Lee, et al.
Scientific Reports
|
June 9, 2016
Real-time device-scale imaging of conducting filament dynamics in resistive switching materials
Keundong Lee, Youngbin Tchoe, Hosang Yoon, et al.
Nano Letters
|
February 24, 2017
Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction
Chansoo Yoon, Ji Hye Lee, Sangik Lee, et al.
Scientific Reports
|
November 4, 2014
Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique
Sangik Lee, Inrok Hwang, Sungtaek Oh, et al.
Nanotechnology
|
March 18, 2017
Flexible resistive random access memory devices by using NiO <sub>x</sub> /GaN microdisk arrays fabricated on graphene films
Keundong Lee, Jong-Woo Park, Youngbin Tchoe, et al.
ACS Applied Materials & Interfaces
|
May 17, 2018
Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers
Sangik Lee, Chansoo Yoon, Ji Hye Lee, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
December 5, 2025
Dual Bipolar Resistive Switching in Wafer-Scalable 2D Perovskite Oxide Nanosheets-Based Memristor
Sohwi Kim, Chansoo Yoon, Haena Yim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
May 25, 2022
Progressive and Stable Synaptic Plasticity with Femtojoule Energy Consumption by the Interface Engineering of a Metal/Ferroelectric/Semiconductor
Sohwi Kim, Chansoo Yoon, Gwangtaek Oh, et al.
Nano Letters
|
July 6, 2023
Heterosynaptic Plasticity in a Vertical Two-Terminal Synaptic Device
Haena Yim, Chansoo Yoon, Ahrom Ryu, et al.
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of 2