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Nanoscale|July 16, 2019
High-throughput screening and classification of layered di-metal chalcogenidesJinchen Wei, Chao Wang, Tao Zhang, et al.The Journal of Chemical Physics|May 8, 2026
Defect engineering for enhanced stability and spontaneous polarization in rhombohedral HfO2: First-principles insightsGuliqinayi Alimu, Feifan Bian, Chunlan Ma, et al.Journal of the American Chemical Society|April 12, 2016
Polytypic Nanocrystals of Cu-Based Ternary Chalcogenides: Colloidal Synthesis and Photoelectrochemical PropertiesLiang Wu, Shi-You Chen, Feng-Jia Fan, et al.The Journal of Chemical Physics|January 3, 2025
Electride transition in liquid aluminum under high pressure and high temperatureYuxin Qin, Xiaoliang Zhang, Shiting Zhou, et al.Journal of the American Chemical Society|December 21, 2016
GeSe Thin-Film Solar Cells Fabricated by Self-Regulated Rapid Thermal SublimationDing-Jiang Xue, Shun-Chang Liu, Chen-Min Dai, et al.Advanced Materials (Deerfield Beach, Fla.)|March 3, 2023
Achieving Ferroelectricity in a Centrosymmetric High-Performance Semiconductor by Strain EngineeringMengqi Wu, Zhefeng Lou, Chen-Min Dai, et al.Nature Communications|January 29, 2021
An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaicsShun-Chang Liu, Chen-Min Dai, Yimeng Min, et al.Nature Communications|April 22, 2026
S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductorLing Huang, Jialiang Wu, Chen-Min Dai, et al.Pageof 1