Showing results (11-20 of 37) with videos related to

Sort By:
Pageof 4
Physical Chemistry Chemical Physics : PCCP|August 3, 2011
Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayersYandong Ma, Ying Dai, Meng Guo, et al.
Physical Review Letters|February 29, 2020
Antiferromagnetic Topological Insulator with Nonsymmorphic Protection in Two DimensionsChengwang Niu, Hao Wang, Ning Mao, et al.
ACS Nano|January 24, 2012
Evidence of the existence of magnetism in pristine VX₂ monolayers (X = S, Se) and their strain-induced tunable magnetic propertiesYandong Ma, Ying Dai, Meng Guo, et al.
Nanoscale|April 16, 2011
Strain-induced magnetic transitions in half-fluorinated single layers of BN, GaN and grapheneYandong Ma, Ying Dai, Meng Guo, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|July 29, 2022
Orbital Shift-Induced Boundary Obstructed Topological Materials with a Large Energy GapNing Mao, Runhan Li, Ying Dai, et al.
Materials Horizons|November 25, 2021
A magnetic topological insulator in two-dimensional EuCd2Bi2: giant gap with robust topology against magnetic transitionsHao Wang, Ning Mao, Xiangting Hu, et al.
Nano Letters|December 19, 2023
Engineering Gapless Edge States from Antiferromagnetic Chern HomobilayerXiaorong Zou, Runhan Li, Zhiqi Chen, et al.
Nano Letters|August 5, 2015
Two-Dimensional Topological Crystalline Insulator and Topological Phase Transition in TlSe and TlS MonolayersChengwang Niu, Patrick M Buhl, Gustav Bihlmayer, et al.
Materials Horizons|May 28, 2024
Floquet engineering of the orbital Hall effect and valleytronics in two-dimensional topological magnetsRunhan Li, Xiaorong Zou, Zhiqi Chen, et al.
Scientific Reports|October 8, 2016
Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayerQunqun Liu, Ying Dai, Yandong Ma, et al.
Pageof 4