Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Cheol Seong Hwang

Showing results (21-30 of 176) with videos related to

Pageof 18
Sort By:
Scientific Reports|October 19, 2019
Ferroelectric switching in bilayer 3R MoS<sub>2</sub> via interlayer shear mode driven by nonlinear phononicsJaehong Park, In Won Yeu, Gyuseung Han, et al.
Micromachines|April 3, 2019
Artificial Neural Network for Response Inference of a Nonvolatile Resistance-Switch ArrayGuhyun Kim, Vladimir Kornijcuk, Dohun Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 21, 2025
Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect TransistorKyung Do Kim, Min Kyu Yeom, Han Sol Park, et al.
Nanoscale|November 22, 2024
Theoretical understanding of the in-plane tensile strain effects on enhancing the ferroelectric performance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> and ZrO<sub>2</sub> thin filmsKun Hee Ye, Taeyoung Jeong, Seungjae Yoon, et al.
Nature Communications|September 30, 2022
Probabilistic computing using Cu<sub>0.1</sub>Te<sub>0.9</sub>/HfO<sub>2</sub>/Pt diffusive memristorsKyung Seok Woo, Jaehyun Kim, Janguk Han, et al.
ACS Applied Materials & Interfaces|February 7, 2013
Controlling work function and damaging effects of sputtered RuO₂ gate electrodes by changing oxygen gas ratio during sputteringHyo Kyeom Kim, Il-Hyuk Yu, Jae Ho Lee, et al.
ACS Applied Materials & Interfaces|November 26, 2014
Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodesYeon Woo Yoo, Woojin Jeon, Woongkyu Lee, et al.
Physical Chemistry Chemical Physics : PCCP|August 5, 2017
Regulation of transport properties by polytypism: a computational study on bilayer MoS<sub>2</sub>Swastika Banerjee, Jaehong Park, Cheol Seong Hwang, et al.
ACS Applied Materials & Interfaces|August 18, 2020
Complementary Resistive Switching and Synaptic-Like Memory Behavior in an Epitaxial SrFeO<sub>2.5</sub> Thin Film through Oriented Oxygen-Vacancy ChannelsVenkata Raveendra Nallagatla, Jihun Kim, Kyoungjun Lee, et al.
Nanoscale|June 5, 2013
Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitorsHyungkwang Lim, Ho Won Jang, Doh-Kwon Lee, et al.
Pageof 18

Showing results (21-30 of 176) with videos related to

Sort By:
Pageof 18
Scientific Reports|October 19, 2019
Ferroelectric switching in bilayer 3R MoS<sub>2</sub> via interlayer shear mode driven by nonlinear phononicsJaehong Park, In Won Yeu, Gyuseung Han, et al.
Micromachines|April 3, 2019
Artificial Neural Network for Response Inference of a Nonvolatile Resistance-Switch ArrayGuhyun Kim, Vladimir Kornijcuk, Dohun Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 21, 2025
Proximity-Induced Ferroelectric Switching in Wurtzite/Fluorite Bilayers for High-Performance Ferroelectric Field-Effect TransistorKyung Do Kim, Min Kyu Yeom, Han Sol Park, et al.
Nanoscale|November 22, 2024
Theoretical understanding of the in-plane tensile strain effects on enhancing the ferroelectric performance of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> and ZrO<sub>2</sub> thin filmsKun Hee Ye, Taeyoung Jeong, Seungjae Yoon, et al.
Nature Communications|September 30, 2022
Probabilistic computing using Cu<sub>0.1</sub>Te<sub>0.9</sub>/HfO<sub>2</sub>/Pt diffusive memristorsKyung Seok Woo, Jaehyun Kim, Janguk Han, et al.
ACS Applied Materials & Interfaces|February 7, 2013
Controlling work function and damaging effects of sputtered RuO₂ gate electrodes by changing oxygen gas ratio during sputteringHyo Kyeom Kim, Il-Hyuk Yu, Jae Ho Lee, et al.
ACS Applied Materials & Interfaces|November 26, 2014
Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodesYeon Woo Yoo, Woojin Jeon, Woongkyu Lee, et al.
Physical Chemistry Chemical Physics : PCCP|August 5, 2017
Regulation of transport properties by polytypism: a computational study on bilayer MoS<sub>2</sub>Swastika Banerjee, Jaehong Park, Cheol Seong Hwang, et al.
ACS Applied Materials & Interfaces|August 18, 2020
Complementary Resistive Switching and Synaptic-Like Memory Behavior in an Epitaxial SrFeO<sub>2.5</sub> Thin Film through Oriented Oxygen-Vacancy ChannelsVenkata Raveendra Nallagatla, Jihun Kim, Kyoungjun Lee, et al.
Nanoscale|June 5, 2013
Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitorsHyungkwang Lim, Ho Won Jang, Doh-Kwon Lee, et al.
Pageof 18