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Optics Express
|
February 12, 2014
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
Bing-Chen Lin, Kuo-Ju Chen, Chao-Hsun Wang, et al.
Nanoscale Research Letters
|
September 27, 2014
Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
Chia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, et al.
Scientific Reports
|
August 4, 2017
Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
Tzu-Neng Lin, Svette Reina Merden Santiago, Chi-Tsu Yuan, et al.
Nanotechnology
|
January 7, 2012
High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks
Ching-Hsueh Chiu, Chien-Chung Lin, Hau-Vei Han, et al.
Optics Express
|
November 22, 2024
Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation
Yu-Ting Chen, Lu-Hsun Chen, Chii-Bin Wu, et al.
Nanoscale Research Letters
|
August 16, 2019
Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s
Chih-Chiang Shen, Tsung-Chi Hsu, Yen-Wei Yeh, et al.
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Showing results (11-20 of 16) with videos related to
Sort By:
Page
of 2
You have reached the last page of results.
This site can display upto 16 results.
Optics Express
|
February 12, 2014
Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer
Bing-Chen Lin, Kuo-Ju Chen, Chao-Hsun Wang, et al.
Nanoscale Research Letters
|
September 27, 2014
Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
Chia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, et al.
Scientific Reports
|
August 4, 2017
Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
Tzu-Neng Lin, Svette Reina Merden Santiago, Chi-Tsu Yuan, et al.
Nanotechnology
|
January 7, 2012
High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks
Ching-Hsueh Chiu, Chien-Chung Lin, Hau-Vei Han, et al.
Optics Express
|
November 22, 2024
Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation
Yu-Ting Chen, Lu-Hsun Chen, Chii-Bin Wu, et al.
Nanoscale Research Letters
|
August 16, 2019
Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s
Chih-Chiang Shen, Tsung-Chi Hsu, Yen-Wei Yeh, et al.
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of 2