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ACS Applied Materials & Interfaces|December 2, 2023
Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial SynapsesYu-Rim Jeon, Duho Kim, Boncheol Ku, et al.Nanoscale|February 12, 2025
Hf0.5Zr0.5O2/HfO2/Hf0.5Zr0.5O2 laminated thin films and CF4 plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistorsKyungsoo Park, Chulwon Chung, Boncheol Ku, et al.Nanoscale|April 3, 2025
Grain size engineering via a Hf0.5Zr0.5O2 seed layer for FeFET memory and synaptic devicesJunhyeok Park, Chulwon Chung, Boncheol Ku, et al.Journal of Nanoscience and Nanotechnology|November 20, 2013
RF-magnetron sputtered kesterite Cu2ZnSnS4 thin film using single quaternary sputtering target prepared by sintering processDongjun Yoo, Moonsuk Choi, Seung Chan Heo, et al.Journal of Nanoscience and Nanotechnology|November 26, 2013
Characteristics of radio frequency-sputtered ZnS on the flexible polyethylene terephthalate (PET) substrateDongjun Yoo, Moon-Suk Choi, Chulwon Chung, et al.Experimental Neurology|November 5, 2013
Endogenous PI3K/Akt and NMDAR act independently in the regulation of CREB activity in lumbosacral spinal cord in cystitisJarren C Kay, Chun-Mei Xia, Miao Liu, et al.ACS Applied Materials & Interfaces|November 1, 2021
Analog Synaptic Transistor with Al-Doped HfO2 Ferroelectric Thin FilmDuho Kim, Yu-Rim Jeon, Boncheol Ku, et al.Pageof 1