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Optics Express|August 13, 2025
Physical models and numerical modeling for 280 nm AlGaN-based emission-and-detection dual functional integrated devices by managing hole transport and recombinationKangkai Tian, Zhengwang Pei, Silu Feng, et al.
Nanoscale Research Letters|August 8, 2019
Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting DiodesJiamang Che, Hua Shao, Jianquan Kou, et al.
Optics Letters|March 15, 2022
Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivityGuansen Huang, Chunshuang Chu, Long Guo, et al.
Optics Letters|August 2, 2024
Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layerZhaoqiang Liu, Yifei Dong, Linhao Wang, et al.
Optics Express|October 7, 2021
Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated conesGai Zhang, Hua Shao, Muyao Zhang, et al.
Nanoscale Research Letters|April 26, 2018
Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping EfficiencyZi-Hui Zhang, Sung-Wen Huang Chen, Chunshuang Chu, et al.
Optics Express|March 18, 2026
Watt-class 368 nm UVA light-emitting diode grown on Si with a polarization-doped electron blocking layerXiujian Sun, Jianxun Liu, Xiaoning Zhan, et al.
Optics Express|October 12, 2022
Improving the performance for flip-chip AlGaN-based deep ultraviolet light-emitting diodes using surface textured Ga-face n-AlGaNGai Zhang, Bing Wang, Tong Jia, et al.
Optics Express|August 13, 2025
Enhancing deflection efficiency of resonant cavity light-emitting diodes integrating with metagrating via the internal absorption effectYuling Wu, Deyi Zhai, Zhaoqiang Liu, et al.
Optics Express|June 30, 2019
On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layerChunshuang Chu, Kangkai Tian, Jiamang Che, et al.
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