Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

D J Carrad

Showing results (1-10 of 5) with videos related to

Pageof 1
Sort By:
Nano Letters|June 21, 2018
Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect TransistorsJ G Gluschke, J Seidl, R W Lyttleton, et al.
Nano Letters|April 17, 2015
InAs Nanowire Transistors with Multiple, Independent Wrap-Gate SegmentsA M Burke, D J Carrad, J G Gluschke, et al.
Nanotechnology|December 8, 2018
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistorsJ G Gluschke, J Seidl, A M Burke, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|July 18, 2013
The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devicesD J Carrad, A M Burke, P J Reece, et al.
Nano Letters|December 22, 2016
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic CircuitryD J Carrad, A B Mostert, A R Ullah, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
Nano Letters|June 21, 2018
Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect TransistorsJ G Gluschke, J Seidl, R W Lyttleton, et al.
Nano Letters|April 17, 2015
InAs Nanowire Transistors with Multiple, Independent Wrap-Gate SegmentsA M Burke, D J Carrad, J G Gluschke, et al.
Nanotechnology|December 8, 2018
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistorsJ G Gluschke, J Seidl, A M Burke, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|July 18, 2013
The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devicesD J Carrad, A M Burke, P J Reece, et al.
Nano Letters|December 22, 2016
Hybrid Nanowire Ion-to-Electron Transducers for Integrated Bioelectronic CircuitryD J Carrad, A B Mostert, A R Ullah, et al.
Pageof 1