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Nanotechnology|August 10, 2011
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)L Largeau, D L Dheeraj, M Tchernycheva, et al.
Nanotechnology|December 11, 2012
Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxyD L Dheeraj, A M Munshi, M Scheffler, et al.
Nature Communications|April 11, 2014
Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stressG Signorello, E Lörtscher, P A Khomyakov, et al.
Nanotechnology|September 17, 2009
Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxyH L Zhou, T B Hoang, D L Dheeraj, et al.
Nanotechnology|October 1, 2016
Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowiresL Ahtapodov, A M Munshi, J S Nilsen, et al.
Nanotechnology|August 11, 2011
Zinc blende GaAsSb nanowires grown by molecular beam epitaxyD L Dheeraj, G Patriarche, L Largeau, et al.
Journal of Microscopy|October 27, 2015
In situ electronic probing of semiconducting nanowires in an electron microscopeV T Fauske, M B Erlbeck, J Huh, et al.
Nano Letters|January 29, 2014
Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithographyA M Munshi, D L Dheeraj, V T Fauske, et al.
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