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Journal of Nanoscience and Nanotechnology|July 26, 2016
High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric LayersYu Matsuda, Yoshio Nakahara, Daisuke Michiura, et al.Pageof 1