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Daniel Recht

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Physical Review Letters|August 29, 2014
Generalized model for photoinduced surface structure in amorphous thin filmsChao Lu, Daniel Recht, Craig Arnold
Physical Review Letters|June 4, 2011
Insulator-to-metal transition in sulfur-doped siliconMark T Winkler, Daniel Recht, Meng-Ju Sher, et al.
Physical Review Letters|February 14, 2012
Insulator-to-metal transition in selenium-hyperdoped silicon: observation and originElif Ertekin, Mark T Winkler, Daniel Recht, et al.
Nature Communications|January 4, 2014
Room-temperature sub-band gap optoelectronic response of hyperdoped siliconJonathan P Mailoa, Austin J Akey, Christie B Simmons, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Physical Review Letters|August 29, 2014
Generalized model for photoinduced surface structure in amorphous thin filmsChao Lu, Daniel Recht, Craig Arnold
Physical Review Letters|June 4, 2011
Insulator-to-metal transition in sulfur-doped siliconMark T Winkler, Daniel Recht, Meng-Ju Sher, et al.
Physical Review Letters|February 14, 2012
Insulator-to-metal transition in selenium-hyperdoped silicon: observation and originElif Ertekin, Mark T Winkler, Daniel Recht, et al.
Nature Communications|January 4, 2014
Room-temperature sub-band gap optoelectronic response of hyperdoped siliconJonathan P Mailoa, Austin J Akey, Christie B Simmons, et al.
Pageof 1