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Daniele Ielmini

Showing results (31-40 of 44) with videos related to

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Nano Letters|December 25, 2012
Self-aligned nanotube-nanowire phase change memoryFeng Xiong, Myung-Ho Bae, Yuan Dai, et al.
Science Advances|December 23, 2022
Ionic-electronic halide perovskite memdiodes enabling neuromorphic computing with a second-order complexityRohit Abraham John, Alessandro Milozzi, Sergey Tsarev, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 5, 2018
Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold SwitchMing Wang, Wei Wang, Wan Ru Leow, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 30, 2018
Silicon Oxide (SiO<sub>x</sub> ): A Promising Material for Resistance Switching?Adnan Mehonic, Alexander L Shluger, David Gao, et al.
Nature|April 16, 2025
The growing memristor industryMario Lanza, Sebastian Pazos, Fernando Aguirre, et al.
Nano Letters|January 13, 2022
Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory NeuronsHyejin Lee, Seong Won Cho, Seon Jeong Kim, et al.
Faraday Discussions|January 31, 2019
Phase-change memories (PCM) - Experiments and modelling: general discussionPhilip Bartlett, Alexandra I Berg, Marco Bernasconi, et al.
Faraday Discussions|January 31, 2019
Synaptic and neuromorphic functions: general discussionAlexandra I Berg, Stefano Brivio, Simon Brown, et al.
Nature|March 27, 2023
Hybrid 2D-CMOS microchips for memristive applicationsKaichen Zhu, Sebastian Pazos, Fernando Aguirre, et al.
Nature Communications|March 4, 2024
Hardware implementation of memristor-based artificial neural networksFernando Aguirre, Abu Sebastian, Manuel Le Gallo, et al.
Pageof 5

Showing results (31-40 of 44) with videos related to

Sort By:
Pageof 5
Nano Letters|December 25, 2012
Self-aligned nanotube-nanowire phase change memoryFeng Xiong, Myung-Ho Bae, Yuan Dai, et al.
Science Advances|December 23, 2022
Ionic-electronic halide perovskite memdiodes enabling neuromorphic computing with a second-order complexityRohit Abraham John, Alessandro Milozzi, Sergey Tsarev, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 5, 2018
Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold SwitchMing Wang, Wei Wang, Wan Ru Leow, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 30, 2018
Silicon Oxide (SiO<sub>x</sub> ): A Promising Material for Resistance Switching?Adnan Mehonic, Alexander L Shluger, David Gao, et al.
Nature|April 16, 2025
The growing memristor industryMario Lanza, Sebastian Pazos, Fernando Aguirre, et al.
Nano Letters|January 13, 2022
Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory NeuronsHyejin Lee, Seong Won Cho, Seon Jeong Kim, et al.
Faraday Discussions|January 31, 2019
Phase-change memories (PCM) - Experiments and modelling: general discussionPhilip Bartlett, Alexandra I Berg, Marco Bernasconi, et al.
Faraday Discussions|January 31, 2019
Synaptic and neuromorphic functions: general discussionAlexandra I Berg, Stefano Brivio, Simon Brown, et al.
Nature|March 27, 2023
Hybrid 2D-CMOS microchips for memristive applicationsKaichen Zhu, Sebastian Pazos, Fernando Aguirre, et al.
Nature Communications|March 4, 2024
Hardware implementation of memristor-based artificial neural networksFernando Aguirre, Abu Sebastian, Manuel Le Gallo, et al.
Pageof 5