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Debdeep Jena

Showing results (21-30 of 37) with videos related to

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Nature Communications|April 19, 2012
Broadband graphene terahertz modulators enabled by intraband transitionsBerardi Sensale-Rodriguez, Rusen Yan, Michelle M Kelly, et al.
Nano Letters|April 16, 2026
Lorentzian Switching Dynamics in HZO-Based FeMEMS Synapses for Neuromorphic Weight StorageShubham Jadhav, Kaustav Roy, Luis Marcelo Amaro, et al.
Nano Letters|July 31, 2015
Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band AlignmentRusen Yan, Sara Fathipour, Yimo Han, et al.
Nature|September 25, 2024
Using both faces of polar semiconductor wafers for functional devicesLen van Deurzen, Eungkyun Kim, Naomi Pieczulewski, et al.
Nature|October 24, 2024
Publisher Correction: Using both faces of polar semiconductor wafers for functional devicesLen van Deurzen, Eungkyun Kim, Naomi Pieczulewski, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 21, 2012
High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infraredWoong Choi, Mi Yeon Cho, Aniruddha Konar, et al.
Nano Letters|August 7, 2012
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulatorsBerardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, et al.
ACS Applied Materials & Interfaces|July 27, 2022
Properties for Thermally Conductive Interfaces with Wide Band Gap MaterialsSamreen Khan, Frank Angeles, John Wright, et al.
Scientific Reports|March 31, 2016
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growthPriti Gupta, A A Rahman, Shruti Subramanian, et al.
Science Advances|December 22, 2021
Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunctionTianlun Yu, John Wright, Guru Khalsa, et al.
Pageof 4

Showing results (21-30 of 37) with videos related to

Sort By:
Pageof 4
Nature Communications|April 19, 2012
Broadband graphene terahertz modulators enabled by intraband transitionsBerardi Sensale-Rodriguez, Rusen Yan, Michelle M Kelly, et al.
Nano Letters|April 16, 2026
Lorentzian Switching Dynamics in HZO-Based FeMEMS Synapses for Neuromorphic Weight StorageShubham Jadhav, Kaustav Roy, Luis Marcelo Amaro, et al.
Nano Letters|July 31, 2015
Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band AlignmentRusen Yan, Sara Fathipour, Yimo Han, et al.
Nature|September 25, 2024
Using both faces of polar semiconductor wafers for functional devicesLen van Deurzen, Eungkyun Kim, Naomi Pieczulewski, et al.
Nature|October 24, 2024
Publisher Correction: Using both faces of polar semiconductor wafers for functional devicesLen van Deurzen, Eungkyun Kim, Naomi Pieczulewski, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 21, 2012
High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infraredWoong Choi, Mi Yeon Cho, Aniruddha Konar, et al.
Nano Letters|August 7, 2012
Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulatorsBerardi Sensale-Rodriguez, Rusen Yan, Subrina Rafique, et al.
ACS Applied Materials & Interfaces|July 27, 2022
Properties for Thermally Conductive Interfaces with Wide Band Gap MaterialsSamreen Khan, Frank Angeles, John Wright, et al.
Scientific Reports|March 31, 2016
Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growthPriti Gupta, A A Rahman, Shruti Subramanian, et al.
Science Advances|December 22, 2021
Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunctionTianlun Yu, John Wright, Guru Khalsa, et al.
Pageof 4