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ACS Applied Materials & Interfaces
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October 22, 2019
On-Demand Visible-Light Sensing with Optical Memory Capabilities Based on an Electrical-Breakdown-Triggered Negative Photoconductivity Effect in the Ubiquitous Transparent Hafnia
Mohamed Yousef Hassan, Diing Shenp Ang
Micromachines
|
May 28, 2022
Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications
Haider Abbas, Jiayi Li, Diing Shenp Ang
ACS Applied Materials & Interfaces
|
December 10, 2019
Implementation of Simple but Powerful Trilayer Oxide-Based Artificial Synapses with a Tailored Bio-Synapse-Like Structure
Haizhong Zhang, Xin Ju, Kwang Sing Yew, et al.
RSC Advances
|
May 6, 2022
A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application
Tianli Duan, Chenjie Gu, Diing Shenp Ang, et al.
Nanoscale Horizons
|
August 24, 2023
Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era
Jiayi Li, Haider Abbas, Diing Shenp Ang, et al.
ACS Applied Materials & Interfaces
|
October 11, 2019
Realization of Self-Compliance Resistive Switching Memory via Tailoring Interfacial Oxygen
Haizhong Zhang, Xin Ju, Yu Zhou, et al.
ACS Nano
|
May 25, 2018
Nanoscale Conductive Filament with Alternating Rectification as an Artificial Synapse Building Block
Dan Berco, Yu Zhou, Sankara Rao Gollu, et al.
ACS Applied Materials & Interfaces
|
August 22, 2019
Electrical Tuning of the SERS Enhancement by Precise Defect Density Control
Canliang Zhou, Linfeng Sun, Fengquan Zhang, et al.
Physical Chemistry Chemical Physics : PCCP
|
March 22, 2024
A WO<sub></sub>/MoO<sub></sub> hybrid oxide based SERS FET and investigation on its tunable SERS performance
Kaibo Yuan, Qinqin Qian, Miaomiao Wu, et al.
ACS Applied Materials & Interfaces
|
August 23, 2023
Insights into the Semiconductor SERS Activity: The Impact of the Defect-Induced Energy Band Offset and Electron Lifetime Change
Yinghao Xu, Renli Chen, Shenlong Jiang, et al.
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Showing results (1-10 of 11) with videos related to
Sort By:
Page
of 2
ACS Applied Materials & Interfaces
|
October 22, 2019
On-Demand Visible-Light Sensing with Optical Memory Capabilities Based on an Electrical-Breakdown-Triggered Negative Photoconductivity Effect in the Ubiquitous Transparent Hafnia
Mohamed Yousef Hassan, Diing Shenp Ang
Micromachines
|
May 28, 2022
Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications
Haider Abbas, Jiayi Li, Diing Shenp Ang
ACS Applied Materials & Interfaces
|
December 10, 2019
Implementation of Simple but Powerful Trilayer Oxide-Based Artificial Synapses with a Tailored Bio-Synapse-Like Structure
Haizhong Zhang, Xin Ju, Kwang Sing Yew, et al.
RSC Advances
|
May 6, 2022
A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application
Tianli Duan, Chenjie Gu, Diing Shenp Ang, et al.
Nanoscale Horizons
|
August 24, 2023
Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era
Jiayi Li, Haider Abbas, Diing Shenp Ang, et al.
ACS Applied Materials & Interfaces
|
October 11, 2019
Realization of Self-Compliance Resistive Switching Memory via Tailoring Interfacial Oxygen
Haizhong Zhang, Xin Ju, Yu Zhou, et al.
ACS Nano
|
May 25, 2018
Nanoscale Conductive Filament with Alternating Rectification as an Artificial Synapse Building Block
Dan Berco, Yu Zhou, Sankara Rao Gollu, et al.
ACS Applied Materials & Interfaces
|
August 22, 2019
Electrical Tuning of the SERS Enhancement by Precise Defect Density Control
Canliang Zhou, Linfeng Sun, Fengquan Zhang, et al.
Physical Chemistry Chemical Physics : PCCP
|
March 22, 2024
A WO<sub></sub>/MoO<sub></sub> hybrid oxide based SERS FET and investigation on its tunable SERS performance
Kaibo Yuan, Qinqin Qian, Miaomiao Wu, et al.
ACS Applied Materials & Interfaces
|
August 23, 2023
Insights into the Semiconductor SERS Activity: The Impact of the Defect-Induced Energy Band Offset and Electron Lifetime Change
Yinghao Xu, Renli Chen, Shenlong Jiang, et al.
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of 2