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Scientific Reports|March 22, 2018
Slow Electron Making More Efficient Radiation EmissionDong-Sing Wuu, Sin-Liang Ou, Ching-Ho Tien
Optics Express|February 8, 2013
GaN light emitting diodes with wing-type imbedded contactsRay-Hua Horng, Kun-Ching Shen, Yu-Wei Kuo, et al.
Discover Nano|December 17, 2024
Development of blue-light GaN based micro light-emitting diodes using ion implantation technologyYu-Hsuan Hsu, Shao-Hua Lin, Dong-Sing Wuu, et al.
Scientific Reports|November 2, 2017
85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineeringTzu-Yu Wang, Chi-Tsung Tasi, Chia-Feng Lin, et al.
Optics Express|July 10, 2012
High indium content InGaN films grown by pulsed laser deposition using a dual-compositing targetKun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu, et al.
Optics Express|April 3, 2013
Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser depositionTzu-Yu Wang, Sin-Liang Ou, Kun-Ching Shen, et al.
Nanomaterials (Basel, Switzerland)|October 27, 2022
A Review on Gallium Oxide Materials from Solution ProcessesJung-Lung Chiang, Bharath Kumar Yadlapalli, Mu-I Chen, et al.
ACS Applied Materials & Interfaces|April 27, 2019
Enhanced Deep-Ultraviolet Responsivity in Aluminum-Gallium Oxide Photodetectors via Structure Deformation by High-Oxygen-Pressure Pulsed Laser DepositionShuo-Huang Yuan, Sin-Liang Ou, Shiau-Yuan Huang, et al.
Optics Express|October 6, 2012
High thermal stability of high indium content InGaN films grown by pulsed laser depositionKun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu, et al.
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