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E Monroy

Showing results (21-30 of 44) with videos related to

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Nano Letters|August 2, 2019
Effect of Bias on the Response of GaN Axial p-n Junction Single-Nanowire PhotodetectorsS Cuesta, M Spies, V Boureau, et al.
International Journal of Dermatology|March 30, 2001
Frequency of toenail onychomycosis in patients with cutaneous manifestations of chronic venous insufficiencyM M Sáez de Ocariz, R Arenas, G A Ranero-Juárez, et al.
Nano Letters|February 8, 2014
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructuresM Beeler, P Hille, J Schörmann, et al.
Nano Letters|October 4, 2012
Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensorsM I den Hertog, F González-Posada, R Songmuang, et al.
Scientific Reports|July 19, 2017
Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trapR Jayaprakash, F G Kalaitzakis, G Christmann, et al.
Nanotechnology|October 6, 2015
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10 THz bandC B Lim, A Ajay, C Bougerol, et al.
Nanotechnology|July 23, 2020
Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sourcesA Harikumar, F Donatini, C Bougerol, et al.
Nanotechnology|August 9, 2017
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructuresA Ajay, C B Lim, D A Browne, et al.
Optics Express|February 12, 2014
Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDsL Monteagudo-Lerma, S Valdueza-Felip, F B Naranjo, et al.
Nanotechnology|February 24, 2016
Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructuresC B Lim, A Ajay, C Bougerol, et al.
Pageof 5

Showing results (21-30 of 44) with videos related to

Sort By:
Pageof 5
Nano Letters|August 2, 2019
Effect of Bias on the Response of GaN Axial p-n Junction Single-Nanowire PhotodetectorsS Cuesta, M Spies, V Boureau, et al.
International Journal of Dermatology|March 30, 2001
Frequency of toenail onychomycosis in patients with cutaneous manifestations of chronic venous insufficiencyM M Sáez de Ocariz, R Arenas, G A Ranero-Juárez, et al.
Nano Letters|February 8, 2014
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructuresM Beeler, P Hille, J Schörmann, et al.
Nano Letters|October 4, 2012
Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensorsM I den Hertog, F González-Posada, R Songmuang, et al.
Scientific Reports|July 19, 2017
Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trapR Jayaprakash, F G Kalaitzakis, G Christmann, et al.
Nanotechnology|October 6, 2015
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10 THz bandC B Lim, A Ajay, C Bougerol, et al.
Nanotechnology|July 23, 2020
Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sourcesA Harikumar, F Donatini, C Bougerol, et al.
Nanotechnology|August 9, 2017
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructuresA Ajay, C B Lim, D A Browne, et al.
Optics Express|February 12, 2014
Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDsL Monteagudo-Lerma, S Valdueza-Felip, F B Naranjo, et al.
Nanotechnology|February 24, 2016
Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructuresC B Lim, A Ajay, C Bougerol, et al.
Pageof 5