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ACS Applied Materials & Interfaces|April 1, 2025
Depolarization Field Controllable HfZrO-Based Ferroelectric Capacitors for Physical Reservoir Computing SystemEuncho Seo, Eunjin Lim, Jio Shin, et al.Nanoscale|October 1, 2024
Influence of the TiN diffusion barrier on the leakage current and ferroelectricity in an Al-doped HfO ferroelectric memristor and its application to neuromorphic computingEunjin Lim, Euncho Seo, Sungjun KimMaterials (Basel, Switzerland)|July 30, 2025
Associative Learning Emulation in HZO-Based Ferroelectric Memristor DevicesEuncho Seo, Maria Rasheed, Sungjun KimThe Journal of Chemical Physics|January 9, 2026
Ferroelectric domain relaxation enables reliable multi-bit storage in hafnia-based memristorsJio Shin, Chaewon Youn, Sungjun KimNanoscale|April 24, 2023
Ferroelectric synaptic devices based on CMOS-compatible HfAlO for neuromorphic and reservoir computing applicationsDahye Kim, Jihyung Kim, Seokyeon Yun, et al.Nano Letters|January 14, 2025
3D Vertical Ferroelectric Capacitors with Excellent ScalabilityEunjin Lim, Yongjin Park, Chaewon Youn, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|June 10, 2025
Integrated Design of Electrically Configurable Ferroelectric and Redox-Based Memristors for Hardware-Implemented Reservoir ComputingJung-Kyu Lee, Yongjin Park, Euncho Seo, et al.Physical Chemistry Chemical Physics : PCCP|February 1, 2023
Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO tunnel junction memoryJihyung Kim, Osung Kwon, Eunjin Lim, et al.Journal of Immunology (Baltimore, Md. : 1950)|December 11, 2013
Demethylation of the human eotaxin-3 gene promoter leads to the elevated expression of eotaxin-3Eunjin Lim, Marc E RothenbergIscience|August 12, 2024
Volatile tin oxide memristor for neuromorphic computingDongyeol Ju, Sungjun KimPageof 31