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ACS Applied Materials & Interfaces
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August 30, 2021
Polarity Control and Weak Fermi-Level Pinning in PdSe<sub>2</sub> Transistors
Jae Eun Seo, Tanmoy Das, Eunpyo Park, et al.
ACS Applied Materials & Interfaces
|
January 4, 2021
Doping-Free All PtSe<sub>2</sub> Transistor via Thickness-Modulated Phase Transition
Tanmoy Das, Eunyeong Yang, Jae Eun Seo, et al.
Nano Letters
|
October 11, 2023
Indium-Gallium-Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine
Eunpyo Park, Suyeon Jang, Gichang Noh, et al.
Nanoscale
|
December 15, 2020
A 2D material-based floating gate device with linear synaptic weight update
Eunpyo Park, Minkyung Kim, Tae Soo Kim, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
April 22, 2022
Gas-Phase Alkali Metal-Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large-Scale Precise Nucleation Control
Tae Soo Kim, Krishna P Dhakal, Eunpyo Park, et al.
ACS Nano
|
May 11, 2021
Low-Temperature and High-Quality Growth of Bi<sub>2</sub>O<sub>2</sub>Se Layered Semiconductors <i>via</i> Cracking Metal-Organic Chemical Vapor Deposition
Minsoo Kang, Hyun-Jun Chai, Han Beom Jeong, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
December 1, 2025
Metal-Organic Chemical Vapor Deposition of 2D Semiconducting Bi<sub>2</sub>O<sub>2</sub>S for High-Performance Field-Effect Transistor
Hyun-Jun Chai, Minsoo Kang, Ayoung Ham, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
August 24, 2022
Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge<sub>4</sub> Se<sub>9</sub>
Gichang Noh, Hwayoung Song, Heenang Choi, et al.
Page
of 1
Search research articles
Search
Showing results (1-10 of 8) with videos related to
Sort By:
Page
of 1
ACS Applied Materials & Interfaces
|
August 30, 2021
Polarity Control and Weak Fermi-Level Pinning in PdSe<sub>2</sub> Transistors
Jae Eun Seo, Tanmoy Das, Eunpyo Park, et al.
ACS Applied Materials & Interfaces
|
January 4, 2021
Doping-Free All PtSe<sub>2</sub> Transistor via Thickness-Modulated Phase Transition
Tanmoy Das, Eunyeong Yang, Jae Eun Seo, et al.
Nano Letters
|
October 11, 2023
Indium-Gallium-Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine
Eunpyo Park, Suyeon Jang, Gichang Noh, et al.
Nanoscale
|
December 15, 2020
A 2D material-based floating gate device with linear synaptic weight update
Eunpyo Park, Minkyung Kim, Tae Soo Kim, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
April 22, 2022
Gas-Phase Alkali Metal-Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large-Scale Precise Nucleation Control
Tae Soo Kim, Krishna P Dhakal, Eunpyo Park, et al.
ACS Nano
|
May 11, 2021
Low-Temperature and High-Quality Growth of Bi<sub>2</sub>O<sub>2</sub>Se Layered Semiconductors <i>via</i> Cracking Metal-Organic Chemical Vapor Deposition
Minsoo Kang, Hyun-Jun Chai, Han Beom Jeong, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
December 1, 2025
Metal-Organic Chemical Vapor Deposition of 2D Semiconducting Bi<sub>2</sub>O<sub>2</sub>S for High-Performance Field-Effect Transistor
Hyun-Jun Chai, Minsoo Kang, Ayoung Ham, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
August 24, 2022
Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge<sub>4</sub> Se<sub>9</sub>
Gichang Noh, Hwayoung Song, Heenang Choi, et al.
Page
of 1