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Ultramicroscopy|June 16, 2021
Resistivity contrast imaging in semiconductor structures using ultra-low energy scanning electron microscopyIwona Jóźwik, Jacek Jagielski, Ewa Dumiszewska, et al.
Ultramicroscopy|May 21, 2019
Damage-induced voltage alteration (DIVA) contrast in SEM images of ion-irradiated semiconductorsIwona Jóźwik, Adam Barcz, Elżbieta Dąbrowska, et al.
Physical Chemistry Chemical Physics : PCCP|April 12, 2019
Destructive role of oxygen in growth of molybdenum disulfide determined by secondary ion mass spectrometryPaweł Piotr Michałowski, Piotr Knyps, Paweł Ciepielewski, et al.
Molecules (Basel, Switzerland)|June 10, 2022
Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water VaporEwa Dumiszewska, Paweł Ciepielewski, Piotr A Caban, et al.
ACS Applied Materials & Interfaces|October 5, 2018
A-Crater-within-a-Crater Approach for Secondary Ion Mass Spectrometry Evaluation of the Quality of Interfaces of Multilayer DevicesPaweł Piotr Michałowski, Wawrzyniec Kaszub, Piotr Knyps, et al.
Physical Chemistry Chemical Physics : PCCP|September 12, 2019
Growth of highly oriented MoS<sub>2</sub>via an intercalation process in the graphene/SiC(0001) systemPaweł Piotr Michałowski, Piotr Knyps, Paweł Ciepielewski, et al.
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