Felicia A McGuire - JoVE Visualize

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ACS Applied Materials & Interfaces|June 28, 2017

Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer DepositionKatherine M Price, Kirstin E Schauble, Felicia A McGuire, et al.

Nano Letters|July 11, 2017

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 TransistorsFelicia A McGuire, Yuh-Chen Lin, Katherine Price, et al.

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Showing results (1-10 of 2) with videos related to

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Pageof 1

ACS Applied Materials & Interfaces|June 28, 2017

Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer DepositionKatherine M Price, Kirstin E Schauble, Felicia A McGuire, et al.

Nano Letters|July 11, 2017

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 TransistorsFelicia A McGuire, Yuh-Chen Lin, Katherine Price, et al.

Pageof 1