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Nano Letters|March 28, 2019
Quantitative Analysis of Weak Antilocalization Effect of Topological Surface States in Topological Insulator BiSbTeSe2Hui Li, Huan-Wen Wang, Yang Li, et al.Nanotechnology|February 13, 2018
Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo dopingDongzhi Fu, Xingchen Pan, Zhanbin Bai, et al.Advanced Materials (Deerfield Beach, Fla.)|April 30, 2021
Disorder-Induced Material-Insensitive Optical Response in Plasmonic Nanostructures: Vibrant Structural Colors from Noble MetalsPeng Mao, Changxu Liu, Yubiao Niu, et al.Nano Letters|June 16, 2023
Broadband and Spectrally Selective Photothermal Conversion through Nanocluster Assembly of Disordered Plasmonic MetasurfacesJi-An Chen, Yuyuan Qin, Yubiao Niu, et al.Journal of the American Chemical Society|April 22, 2010
Scaling dopant states in a semiconducting nanostructure by chemically resolved electron energy-loss spectroscopy: a case study on Co-doped ZnOXuefeng Wang, Fengqi Song, Qian Chen, et al.ACS Nano|October 16, 2020
Identifying Native Point Defects in the Topological Insulator Bi2Te3Asteriona-Maria Netsou, Dmitry A Muzychenko, Heleen Dausy, et al.Nature Communications|May 28, 2020
Electrical switching between exciton dissociation to exciton funneling in MoSe2/WS2 heterostructureYuze Meng, Tianmeng Wang, Chenhao Jin, et al.Nanotechnology|July 29, 2009
Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithographyWei Li, Jiang Zhou, Xian-Gao Zhang, et al.Journal of Nanoscience and Nanotechnology|November 23, 2011
Visualizing topological insulating Bi2Te3 quintuple layers on SiO2-capped Si substrates and its contrast optimizationZhaoguo Li, Yuyuan Qin, Yuewen Mu, et al.Scientific Reports|June 21, 2018
Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSeHaiyang Pan, Bingbing Tong, Jihai Yu, et al.Pageof 10