Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Firman Mangasa Simanjuntak

Showing results (1-10 of 12) with videos related to

Pageof 2
Sort By:
Nanomaterials (Basel, Switzerland)|February 12, 2026
Memristor Synapse-A Device-Level Critical ReviewSridhar Chandrasekaran, Yao-Feng Chang, Firman Mangasa Simanjuntak
Nanotechnology|March 14, 2020
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applicationsFirman Mangasa Simanjuntak, Takeo Ohno, Sridhar Chandrasekaran, et al.
Nanoscale Research Letters|October 21, 2018
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization CellFirman Mangasa Simanjuntak, Sridhar Chandrasekaran, Chun-Chieh Lin, et al.
Nanoscale Research Letters|August 20, 2016
Status and Prospects of ZnO-Based Resistive Switching Memory DevicesFirman Mangasa Simanjuntak, Debashis Panda, Kung-Hwa Wei, et al.
Nanotechnology|July 26, 2019
Improving linearity by introducing Al in HfO<sub>2</sub> as a memristor synapse deviceSridhar Chandrasekaran, Firman Mangasa Simanjuntak, R Saminathan, et al.
Nanotechnology|July 20, 2017
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellFirman Mangasa Simanjuntak, Sridhar Chandrasekaran, Bhaskar Pattanayak, et al.
Materials (Basel, Switzerland)|July 4, 2019
Corrosion Inhibition of Honeycomb Waste Extracts for 304 Stainless Steel in Sulfuric Acid SolutionFemiana Gapsari, Kartika A Madurani, Firman Mangasa Simanjuntak, et al.
Scientific Reports|June 19, 2024
Compliance-free, analog RRAM devices based on SnO<sub>x</sub>Suresh Kumar Garlapati, Firman Mangasa Simanjuntak, Spyros Stathopoulos, et al.
Sensors (Basel, Switzerland)|January 11, 2022
Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas SensorPragya Singh, Firman Mangasa Simanjuntak, Li-Lun Hu, et al.
RSC Advances|October 24, 2022
Ion accumulation-induced capacitance elevation in a microporous graphene-based supercapacitorBhaskar Pattanayak, Phuoc-Anh Le, Debashis Panda, et al.
Pageof 2

Showing results (1-10 of 12) with videos related to

Sort By:
Pageof 2
Nanomaterials (Basel, Switzerland)|February 12, 2026
Memristor Synapse-A Device-Level Critical ReviewSridhar Chandrasekaran, Yao-Feng Chang, Firman Mangasa Simanjuntak
Nanotechnology|March 14, 2020
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applicationsFirman Mangasa Simanjuntak, Takeo Ohno, Sridhar Chandrasekaran, et al.
Nanoscale Research Letters|October 21, 2018
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization CellFirman Mangasa Simanjuntak, Sridhar Chandrasekaran, Chun-Chieh Lin, et al.
Nanoscale Research Letters|August 20, 2016
Status and Prospects of ZnO-Based Resistive Switching Memory DevicesFirman Mangasa Simanjuntak, Debashis Panda, Kung-Hwa Wei, et al.
Nanotechnology|July 26, 2019
Improving linearity by introducing Al in HfO<sub>2</sub> as a memristor synapse deviceSridhar Chandrasekaran, Firman Mangasa Simanjuntak, R Saminathan, et al.
Nanotechnology|July 20, 2017
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellFirman Mangasa Simanjuntak, Sridhar Chandrasekaran, Bhaskar Pattanayak, et al.
Materials (Basel, Switzerland)|July 4, 2019
Corrosion Inhibition of Honeycomb Waste Extracts for 304 Stainless Steel in Sulfuric Acid SolutionFemiana Gapsari, Kartika A Madurani, Firman Mangasa Simanjuntak, et al.
Scientific Reports|June 19, 2024
Compliance-free, analog RRAM devices based on SnO<sub>x</sub>Suresh Kumar Garlapati, Firman Mangasa Simanjuntak, Spyros Stathopoulos, et al.
Sensors (Basel, Switzerland)|January 11, 2022
Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas SensorPragya Singh, Firman Mangasa Simanjuntak, Li-Lun Hu, et al.
RSC Advances|October 24, 2022
Ion accumulation-induced capacitance elevation in a microporous graphene-based supercapacitorBhaskar Pattanayak, Phuoc-Anh Le, Debashis Panda, et al.
Pageof 2