Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Francesco La Via

Showing results (1-10 of 32) with videos related to

Pageof 4
Sort By:
Materials (Basel, Switzerland)|May 27, 2023
Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si HeteroepitaxyViviana Scuderi, Marcin Zielinski, Francesco La Via
Micromachines|September 27, 2025
Numerical Simulations of 3C-SiC High-Sensitivity Strain MetersAnnamaria Muoio, Angela Garofalo, Sergio Sapienza, et al.
Materials (Basel, Switzerland)|April 17, 2020
Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman AnalysisViviana Scuderi, Cristiano Calabretta, Ruggero Anzalone, et al.
Materials (Basel, Switzerland)|July 10, 2019
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase GrowthPhilipp Schuh, Francesco la Via, Marco Mauceri, et al.
Materials (Basel, Switzerland)|March 6, 2021
Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection ApplicationsAlessandro Meli, Annamaria Muoio, Antonio Trotta, et al.
Materials (Basel, Switzerland)|July 27, 2019
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding StacksPhilipp Schuh, Johannes Steiner, Francesco La Via, et al.
Micromachines|March 6, 2025
Model of Quality Factor for (111) 3C-SiC Double-Clamped BeamsAngela Garofalo, Annamaria Muoio, Sergio Sapienza, et al.
Materials (Basel, Switzerland)|October 30, 2019
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch WafersRuggero Anzalone, Massimo Zimbone, Cristiano Calabretta, et al.
Micromachines|September 28, 2021
Measurement of Residual Stress and Young's Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> SiliconSergio Sapienza, Matteo Ferri, Luca Belsito, et al.
Micromachines|May 4, 2026
Heteroepitaxial 3C-SiC for MEMS ApplicationsAngela Garofalo, Annamaria Muoio, Luca Belsito, et al.
Pageof 4

Showing results (1-10 of 32) with videos related to

Sort By:
Pageof 4
Materials (Basel, Switzerland)|May 27, 2023
Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si HeteroepitaxyViviana Scuderi, Marcin Zielinski, Francesco La Via
Micromachines|September 27, 2025
Numerical Simulations of 3C-SiC High-Sensitivity Strain MetersAnnamaria Muoio, Angela Garofalo, Sergio Sapienza, et al.
Materials (Basel, Switzerland)|April 17, 2020
Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman AnalysisViviana Scuderi, Cristiano Calabretta, Ruggero Anzalone, et al.
Materials (Basel, Switzerland)|July 10, 2019
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase GrowthPhilipp Schuh, Francesco la Via, Marco Mauceri, et al.
Materials (Basel, Switzerland)|March 6, 2021
Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection ApplicationsAlessandro Meli, Annamaria Muoio, Antonio Trotta, et al.
Materials (Basel, Switzerland)|July 27, 2019
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding StacksPhilipp Schuh, Johannes Steiner, Francesco La Via, et al.
Micromachines|March 6, 2025
Model of Quality Factor for (111) 3C-SiC Double-Clamped BeamsAngela Garofalo, Annamaria Muoio, Sergio Sapienza, et al.
Materials (Basel, Switzerland)|October 30, 2019
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch WafersRuggero Anzalone, Massimo Zimbone, Cristiano Calabretta, et al.
Micromachines|September 28, 2021
Measurement of Residual Stress and Young's Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> SiliconSergio Sapienza, Matteo Ferri, Luca Belsito, et al.
Micromachines|May 4, 2026
Heteroepitaxial 3C-SiC for MEMS ApplicationsAngela Garofalo, Annamaria Muoio, Luca Belsito, et al.
Pageof 4