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Nanotechnology|January 18, 2013
Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substratesYoshiaki Araki, Masahito Yamaguchi, Fumitaro Ishikawa
Nano Letters|October 28, 2014
Selective synthesis of compound semiconductor/oxide composite nanowiresHideaki Hibi, Masahito Yamaguchi, Naoki Yamamoto, et al.
The Review of Scientific Instruments|May 6, 2010
Epitaxial lift-off for sample preparation of x-ray absorption fine structureKotaro Higashi, Fumitaro Ishikawa, Katsumi Handa, et al.
ACS Nano|July 25, 2022
Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure EngineeringMattias Jansson, Fumitaro Ishikawa, Weimin M Chen, et al.
Scientific Reports|June 24, 2015
Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowiresShula L Chen, Weimin M Chen, Fumitaro Ishikawa, et al.
Scientific Reports|April 15, 2018
Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structureFumitaro Ishikawa, Kotaro Higashi, Satoshi Fuyuno, et al.
Nanoscale|October 12, 2020
Self-assembled nanodisks in coaxial GaAs/GaAsBi/GaAs core-multishell nanowiresBin Zhang, Mattias Jansson, Yumiko Shimizu, et al.
Nano Letters|October 27, 2015
Metamorphic GaAs/GaAsBi Heterostructured NanowiresFumitaro Ishikawa, Yoshihiko Akamatsu, Kentaro Watanabe, et al.
Nanotechnology|February 2, 2017
GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature techniquePallavi Kisan Patil, Esperanza Luna, Teruyoshi Matsuda, et al.
Nano Letters|January 5, 2019
Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell NanowireShula Chen, Mitsuki Yukimune, Ryo Fujiwara, et al.
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