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Nano Letters|February 8, 2017
Dilute Nitride Nanowire Lasers Based on a GaAs/GaNAs Core/Shell StructureShula Chen, Mattias Jansson, Jan E Stehr, et al.Scientific Reports|May 20, 2020
Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowiresRoman M Balagula, Mattias Jansson, Mitsuki Yukimune, et al.Nano Letters|September 19, 2019
Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell NanowiresTeruyoshi Matsuda, Kyohei Takada, Kohsuke Yano, et al.ACS Nano|January 2, 2024
High-Performance Multiwavelength GaNAs Single Nanowire LasersMattias Jansson, Valentyna V Nosenko, Yuto Torigoe, et al.Small (Weinheim an Der Bergstrasse, Germany)|December 17, 2025
Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth Hydrogen ImplantationNadine Denis, Akant Sagar Sharma, Elena Blundo, et al.Nanoscale Advances|March 17, 2023
Wafer-scale integration of GaAs/AlGaAs core-shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxyKeisuke Minehisa, Ryo Murakami, Hidetoshi Hashimoto, et al.Pageof 2