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Nanoscale|April 9, 2020
The mechanism of the modulation of electronic anisotropy in two-dimensional ReS2Renyan Wang, Xiang Xu, Yiwei Yu, et al.Nature Communications|September 13, 2023
Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contactsJun Yu, Han Wang, Fuwei Zhuge, et al.Angewandte Chemie (International Ed. in English)|February 16, 2026
The Precise Modulation of Probe Effective Charges by Debye Length for Enhancing Performance of Aptamer-FET BiosensorsZhi Zheng, Hongyuan Zhang, Ning Zhou, et al.Advanced Materials (Deerfield Beach, Fla.)|October 6, 2021
2D Cu9 S5 /PtS2 /WSe2 Double Heterojunction Bipolar Transistor with High Current GainSanjun Yang, Lejing Pi, Liang Li, et al.Science Bulletin|January 20, 2023
Approaching ohmic contact to two-dimensional semiconductorsKailang Liu, Peng Luo, Wei Han, et al.Nature Materials|August 3, 2023
Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductorsYongshan Xu, Teng Liu, Kailang Liu, et al.Science Bulletin|December 22, 2022
Approaching strain limit of two-dimensional MoS2 via chalcogenide substitutionKailang Liu, Xiang Chen, Penglai Gong, et al.Advanced Materials (Deerfield Beach, Fla.)|November 13, 2023
Adaptive Neural Activation and Neuromorphic Processing via Drain-Injection Threshold-Switching Float Gate Transistor MemoryHan Wang, Yuanlong Lu, Shangbo Liu, et al.Nature Communications|February 2, 2026
van der Waals grain boundaries with inert electrical behaviors in inorganic molecular dielectric filmKailang Liu, Bingrong Huang, Yue Yuan, et al.Small (Weinheim an Der Bergstrasse, Germany)|December 1, 2021
Van der Waals Epitaxy of Bi2 Te2 Se/Bi2 O2 Se Vertical Heterojunction for High Performance PhotodetectorSijie Yang, Peng Luo, Fakun Wang, et al.Pageof 148