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G G Qin

Showing results (1-10 of 20) with videos related to

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Journal of Nanoscience and Nanotechnology|April 2, 2010
Light emission from nanoscale Si/Si oxide materialsG G Qin, G Z Ran, K Sun, et al.
Optics Express|August 14, 2013
Optical absorption characteristics of nanometer and submicron a-Si:H solar cells with two kinds of nano texturesXie Ziang, Wang Wei, Qin Laixiang, et al.
Optics Express|July 1, 2010
1.54 microm electroluminescence from p-Si anode organic light emitting diode with Bphen: Er(DBM)(3)phen as emitter and Bphen as electron transport materialF Wei, Y Z Li, G Z Ran, et al.
Nanotechnology|August 13, 2011
Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effectC Liu, L Dai, L P You, et al.
Applied Optics|August 24, 2006
Light extraction efficiency of a top-emission organic light-emitting diode with an Yb/Au double-layer cathode and an opaque Si anodeG Z Ran, G L Ma, Y H Xu, et al.
Nano Letters|October 16, 2007
High-performance logic circuits constructed on single CdS nanowiresRen-Min Ma, Lun Dai, Hai-Bin Huo, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 22, 2017
Refractive index and extinction coefficient of NH<sub>2</sub>CH  =  NH<sub>2</sub>PbI<sub>3</sub> perovskite photovoltaic materialZiang Xie, Shuren Sun, Yu Yan, et al.
Nanotechnology|August 6, 2011
Strong enhancement of Er(3+) 1.54 µm electroluminescence through amorphous Si nanoparticlesK Sun, W J Xu, B Zhang, et al.
Journal of Nanoscience and Nanotechnology|January 30, 2007
Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substratesW Q Yang, L Dai, L P You, et al.
Nanotechnology|August 27, 2009
Schottky junction photovoltaic devices based on CdS single nanobeltsY Ye, L Dai, P C Wu, et al.
Pageof 2

Showing results (1-10 of 20) with videos related to

Sort By:
Pageof 2
Journal of Nanoscience and Nanotechnology|April 2, 2010
Light emission from nanoscale Si/Si oxide materialsG G Qin, G Z Ran, K Sun, et al.
Optics Express|August 14, 2013
Optical absorption characteristics of nanometer and submicron a-Si:H solar cells with two kinds of nano texturesXie Ziang, Wang Wei, Qin Laixiang, et al.
Optics Express|July 1, 2010
1.54 microm electroluminescence from p-Si anode organic light emitting diode with Bphen: Er(DBM)(3)phen as emitter and Bphen as electron transport materialF Wei, Y Z Li, G Z Ran, et al.
Nanotechnology|August 13, 2011
Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effectC Liu, L Dai, L P You, et al.
Applied Optics|August 24, 2006
Light extraction efficiency of a top-emission organic light-emitting diode with an Yb/Au double-layer cathode and an opaque Si anodeG Z Ran, G L Ma, Y H Xu, et al.
Nano Letters|October 16, 2007
High-performance logic circuits constructed on single CdS nanowiresRen-Min Ma, Lun Dai, Hai-Bin Huo, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 22, 2017
Refractive index and extinction coefficient of NH<sub>2</sub>CH  =  NH<sub>2</sub>PbI<sub>3</sub> perovskite photovoltaic materialZiang Xie, Shuren Sun, Yu Yan, et al.
Nanotechnology|August 6, 2011
Strong enhancement of Er(3+) 1.54 µm electroluminescence through amorphous Si nanoparticlesK Sun, W J Xu, B Zhang, et al.
Journal of Nanoscience and Nanotechnology|January 30, 2007
Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substratesW Q Yang, L Dai, L P You, et al.
Nanotechnology|August 27, 2009
Schottky junction photovoltaic devices based on CdS single nanobeltsY Ye, L Dai, P C Wu, et al.
Pageof 2