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Nanotechnology|June 3, 2015
SiGe quantum dot crystals with periods down to 35 nmC Dais, G Mussler, T Fromherz, et al.Physical Review Letters|April 28, 2009
Continuous voltage tunability of intersubband relaxation times in coupled SiGe quantum well structures using ultrafast spectroscopyP Rauter, T Fromherz, N Q Vinh, et al.Optics Express|February 3, 2016
Study of GeSn based heterostructures: towards optimized group IV MQW LEDsD Stange, N von den Driesch, D Rainko, et al.Scientific Reports|October 30, 2015
Coherent ultrafast spin-dynamics probed in three dimensional topological insulatorsF Boschini, M Mansurova, G Mussler, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 18, 2016
Growth, characterization, and transport properties of ternary (Bi<sub>1-x</sub> Sb <sub>x</sub> )<sub>2</sub>Te<sub>3</sub> topological insulator layersC Weyrich, M Drögeler, J Kampmeier, et al.Physical Review Letters|September 13, 2014
Room-temperature high-frequency transport of dirac fermions in epitaxially grown Sb2Te3- and Bi2Te3-based topological insulatorsP Olbrich, L E Golub, T Herrmann, et al.Pageof 1