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Optics Express|February 14, 2023
Evidence for "dark charge" from photoluminescence measurements in wide InGaN quantum wellsA Bercha, W Trzeciakowski, G Muziol, et al.
Optics Express|October 14, 2022
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodesJ Slawinska, G Muziol, M Siekacz, et al.
Optics Express|March 17, 2021
Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junctionK Pieniak, M Chlipala, H Turski, et al.
Optics Express|November 13, 2020
Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxyG Muziol, M Hajdel, H Turski, et al.
Optics Express|March 17, 2019
Stack of two III-nitride laser diodes interconnected by a tunnel junctionM Siekacz, G Muziol, M Hajdel, et al.
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