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Nano Letters|March 29, 2017
Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon CarbideH Kraus, D Simin, C Kasper, et al.Physical Review Letters|June 13, 2009
Nonthermal photocoercivity effect in a low-doped (Ga,Mn)As ferromagnetic semiconductorG V Astakhov, H Hoffmann, V L Korenev, et al.Physical Review Letters|February 2, 2013
Resonant addressing and manipulation of silicon vacancy qubits in silicon carbideD Riedel, F Fuchs, H Kraus, et al.Physical Review Letters|July 13, 2004
Picosecond dynamics of the photoinduced spin polarization in epitaxial (Ga,Mn)as filmsA V Kimel, G V Astakhov, G M Schott, et al.Nature Communications|April 13, 2019
Excitation and coherent control of spin qudit modes in silicon carbide at room temperatureV A Soltamov, C Kasper, A V Poshakinskiy, et al.Nature Communications|May 16, 2017
Observation of the universal magnetoelectric effect in a 3D topological insulatorV Dziom, A Shuvaev, A Pimenov, et al.Physical Review Letters|September 4, 2008
Suppression of electron spin relaxation in Mn-doped GaAsG V Astakhov, R I Dzhioev, K V Kavokin, et al.Nano Letters|June 27, 2022
Unveiling the Zero-Phonon Line of the Boron Vacancy Center by Cavity-Enhanced EmissionChenjiang Qian, Viviana Villafañe, Martin Schalk, et al.Pageof 2