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Journal of Nanoscience and Nanotechnology|May 16, 2009
Dry etching of nanosized Ge1Sb2Te4 patterns using TiN hard mask for high density phase-change memoryGaoming Feng, Bo Liu, Zhitang Song, et al.Nanoscale|June 17, 2021
Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chipZhitang Song, Daolin Cai, Yan Cheng, et al.Nanoscale|June 17, 2021
12-state multi-level cell storage implemented in a 128 Mb phase change memory chipZhitang Song, Daolin Cai, Yan Cheng, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|July 17, 2025
Memristive In-Memory Object Detection with 128 Mb C-Doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> PCM ChipChenchen Xie, Yuqi Li, Longhao Yan, et al.Pageof 1