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Geoffrey Avit

Showing results (1-10 of 8) with videos related to

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Scientific Reports|March 25, 2021
Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithographyGeoffrey Avit, Yoann Robin, Yaqiang Liao, et al.
Nano Letters|January 8, 2014
Ultralong and defect-free GaN nanowires grown by the HVPE processGeoffrey Avit, Kaddour Lekhal, Yamina André, et al.
Nanotechnology|March 24, 2024
Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPEElias Semlali, Geoffrey Avit, Yamina André, et al.
Nanotechnology|November 21, 2018
Compositional control of homogeneous InGaN nanowires with the In content up to 90Mohammed Zeghouane, Geoffrey Avit, Yamina André, et al.
Nanotechnology|February 5, 2024
Long indium-rich InGaAs nanowires by SAG-HVPEEmmanuel Chereau, Gabin Grégoire, Geoffrey Avit, et al.
Nanotechnology|August 31, 2018
Circumventing the miscibility gap in InGaN nanowires emitting from blue to redElissa Roche, Yamina André, Geoffrey Avit, et al.
The Journal of Chemical Physics|May 24, 2014
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleationYamina André, Kaddour Lekhal, Philip Hoggan, et al.
Nano Letters|May 31, 2014
Record pure zincblende phase in GaAs nanowires down to 5 nm in radiusEvelyne Gil, Vladimir G Dubrovskii, Geoffrey Avit, et al.
Pageof 1

Showing results (1-10 of 8) with videos related to

Sort By:
Pageof 1
Scientific Reports|March 25, 2021
Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithographyGeoffrey Avit, Yoann Robin, Yaqiang Liao, et al.
Nano Letters|January 8, 2014
Ultralong and defect-free GaN nanowires grown by the HVPE processGeoffrey Avit, Kaddour Lekhal, Yamina André, et al.
Nanotechnology|March 24, 2024
Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPEElias Semlali, Geoffrey Avit, Yamina André, et al.
Nanotechnology|November 21, 2018
Compositional control of homogeneous InGaN nanowires with the In content up to 90Mohammed Zeghouane, Geoffrey Avit, Yamina André, et al.
Nanotechnology|February 5, 2024
Long indium-rich InGaAs nanowires by SAG-HVPEEmmanuel Chereau, Gabin Grégoire, Geoffrey Avit, et al.
Nanotechnology|August 31, 2018
Circumventing the miscibility gap in InGaN nanowires emitting from blue to redElissa Roche, Yamina André, Geoffrey Avit, et al.
The Journal of Chemical Physics|May 24, 2014
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleationYamina André, Kaddour Lekhal, Philip Hoggan, et al.
Nano Letters|May 31, 2014
Record pure zincblende phase in GaAs nanowires down to 5 nm in radiusEvelyne Gil, Vladimir G Dubrovskii, Geoffrey Avit, et al.
Pageof 1