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Geok Ing Ng

Showing results (1-10 of 5) with videos related to

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Applied Optics|October 20, 2017
Compact microring resonators integrated with grating couplers working at 2  μm wavelength on silicon-on-insulator platformZecen Zhang, Geok Ing Ng, Haodong Qiu, et al.
Optics Express|November 10, 2016
Electromagnetically induced transparency-like effect in microring-Bragg gratings based coupling resonant systemZecen Zhang, Geok Ing Ng, Ting Hu, et al.
ACS Applied Materials & Interfaces|May 25, 2026
Multimode GaN Transistors with Ultrawide Threshold Voltage Control Enabled by Passivation-Induced Stress-Strain-Polarization CouplingSiyu Liu, Yihao Zhuang, Pengju Cui, et al.
Sensors (Basel, Switzerland)|November 27, 2019
Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection EfficiencyAbhinay Sandupatla, Subramaniam Arulkumaran, Kumud Ranjan, et al.
Optics Express|May 3, 2018
Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laserXiang Li, Hong Wang, Zhongliang Qiao, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
Applied Optics|October 20, 2017
Compact microring resonators integrated with grating couplers working at 2  μm wavelength on silicon-on-insulator platformZecen Zhang, Geok Ing Ng, Haodong Qiu, et al.
Optics Express|November 10, 2016
Electromagnetically induced transparency-like effect in microring-Bragg gratings based coupling resonant systemZecen Zhang, Geok Ing Ng, Ting Hu, et al.
ACS Applied Materials & Interfaces|May 25, 2026
Multimode GaN Transistors with Ultrawide Threshold Voltage Control Enabled by Passivation-Induced Stress-Strain-Polarization CouplingSiyu Liu, Yihao Zhuang, Pengju Cui, et al.
Sensors (Basel, Switzerland)|November 27, 2019
Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection EfficiencyAbhinay Sandupatla, Subramaniam Arulkumaran, Kumud Ranjan, et al.
Optics Express|May 3, 2018
Investigation of regime switching from mode locking to Q-switching in a 2 µm InGaSb/AlGaAsSb quantum well laserXiang Li, Hong Wang, Zhongliang Qiao, et al.
Pageof 1