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Gerhard Klimeck

Showing results (21-30 of 37) with videos related to

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Nanotechnology|April 4, 2012
The polarization response in InAs quantum dots: theoretical correlation between composition and electronic propertiesMuhammad Usman, Vittorianna Tasco, Maria Teresa Todaro, et al.
Small (Weinheim an Der Bergstrasse, Germany)|August 27, 2019
WSe<sub>2</sub> Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable ComputingChin-Sheng Pang, Chin-Yi Chen, Tarek Ameen, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theoryMuhammad Usman, Rajib Rahman, Joe Salfi, et al.
Nanotechnology|July 9, 2011
Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculationsMuhammad Usman, Yui-Hong Matthias Tan, Hoon Ryu, et al.
Physical Review Letters|August 7, 2007
High precision quantum control of single donor spins in siliconRajib Rahman, Cameron J Wellard, Forrest R Bradbury, et al.
Physical Review Letters|December 27, 2014
Spin-lattice relaxation times of single donors and donor clusters in siliconYu-Ling Hsueh, Holger Büch, Yaohua Tan, et al.
ACS Nano|December 20, 2018
Complementary Black Phosphorus Tunneling Field-Effect TransistorsPeng Wu, Tarek Ameen, Huairuo Zhang, et al.
ACS Applied Materials & Interfaces|July 10, 2019
MoS<sub>2</sub> for Enhanced Electrical Performance of Ultrathin Copper FilmsTingting Shen, Daniel Valencia, Qingxiao Wang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 9, 2014
A tight-binding study of single-atom transistorsHoon Ryu, Sunhee Lee, Martin Fuechsle, et al.
Nano Letters|April 11, 2013
Noninvasive spatial metrology of single-atom devicesFahd A Mohiyaddin, Rajib Rahman, Rachpon Kalra, et al.
Pageof 4

Showing results (21-30 of 37) with videos related to

Sort By:
Pageof 4
Nanotechnology|April 4, 2012
The polarization response in InAs quantum dots: theoretical correlation between composition and electronic propertiesMuhammad Usman, Vittorianna Tasco, Maria Teresa Todaro, et al.
Small (Weinheim an Der Bergstrasse, Germany)|August 27, 2019
WSe<sub>2</sub> Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable ComputingChin-Sheng Pang, Chin-Yi Chen, Tarek Ameen, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theoryMuhammad Usman, Rajib Rahman, Joe Salfi, et al.
Nanotechnology|July 9, 2011
Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculationsMuhammad Usman, Yui-Hong Matthias Tan, Hoon Ryu, et al.
Physical Review Letters|August 7, 2007
High precision quantum control of single donor spins in siliconRajib Rahman, Cameron J Wellard, Forrest R Bradbury, et al.
Physical Review Letters|December 27, 2014
Spin-lattice relaxation times of single donors and donor clusters in siliconYu-Ling Hsueh, Holger Büch, Yaohua Tan, et al.
ACS Nano|December 20, 2018
Complementary Black Phosphorus Tunneling Field-Effect TransistorsPeng Wu, Tarek Ameen, Huairuo Zhang, et al.
ACS Applied Materials & Interfaces|July 10, 2019
MoS<sub>2</sub> for Enhanced Electrical Performance of Ultrathin Copper FilmsTingting Shen, Daniel Valencia, Qingxiao Wang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 9, 2014
A tight-binding study of single-atom transistorsHoon Ryu, Sunhee Lee, Martin Fuechsle, et al.
Nano Letters|April 11, 2013
Noninvasive spatial metrology of single-atom devicesFahd A Mohiyaddin, Rajib Rahman, Rachpon Kalra, et al.
Pageof 4