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Micromachines|July 27, 2024
A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature ConvergenceMischa Thesberg, Franz Schanovsky, Ying Zhao, et al.
ACS Nano|October 6, 2016
Long-Term Stability and Reliability of Black Phosphorus Field-Effect TransistorsYury Yuryevich Illarionov, Michael Waltl, Gerhard Rzepa, et al.
Fundamental Research|January 30, 2026
Overview of emerging semiconductor device model methodologies: From device physics to machine learning enginesXufan Li, Zhenhua Wu, Gerhard Rzepa, et al.
ACS Nano|March 19, 2025
Stability and Reliability of van der Waals High-κ SrTiO<sub>3</sub> Field-Effect Transistors with Small HysteresisSeyed Mehdi Sattari-Esfahlan, Allen Jian Yang, Rittik Ghosh, et al.
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