Showing results (1-10 of 12) with videos related to
Sort By:
Pageof 2
Journal of Synchrotron Radiation|April 23, 2004
Treatment of EXAFS data taken in the fluorescence mode in non-linear conditionsGianluca Ciatto, Francesco d'Acapito, Federico Boscherini, et al.ACS Applied Materials & Interfaces|May 17, 2024
Exceptional Hydrogen Uptake in Crystalline In<sub></sub>Ga<sub>1-</sub>N SemiconductorsGianluca Ciatto, Francesco Filippone, Antonio Polimeni, et al.The Review of Scientific Instruments|August 4, 2007
Rotating sample holder at low temperatureSebastien Pasternak, Florian Perrin, Gianluca Ciatto, et al.Physical Chemistry Chemical Physics : PCCP|March 11, 2021
Retention of surface structure causes lower density in atomic layer deposition of amorphous titanium oxide thin filmsBenjamin B Rich, Yael Etinger-Geller, Gianluca Ciatto, et al.Physical Chemistry Chemical Physics : PCCP|June 25, 2019
Surface reconstruction causes structural variations in nanometric amorphous Al<sub>2</sub>O<sub>3</sub>Yael Etinger-Geller, Iryna Polishchuk, Eva Seknazi, et al.Scientific Reports|February 4, 2021
Unravelling the local crystallographic structure of ferromagnetic [Formula: see text]-[Formula: see text]N nanocrystals embedded in GaNAndrea Navarro-Quezada, Katarzyna Gas, Anna Spindlberger, et al.Journal of Synchrotron Radiation|November 7, 2023
Opportunities and new developments for the study of surfaces and interfaces in soft condensed matter at the SIRIUS beamline of Synchrotron SOLEILArnaud Hemmerle, Nicolas Aubert, Thierry Moreno, et al.Small (Weinheim an Der Bergstrasse, Germany)|July 25, 2025
Electronic Structure Modulation of AlN<sub>4</sub> Single-Atom Catalyst for Oxygen Reduction ReactionShahan Atif, Omeshwari Yadorao Bisen, Soumen Midya, et al.Nanoscale|January 3, 2024
Quantitative <i>in situ</i> synchrotron X-ray analysis of the ALD/MLD growth of transition metal dichalcogenide TiS<sub>2</sub> ultrathin filmsAshok-Kumar Yadav, Weiliang Ma, Petros Abi Younes, et al.Nanoscale|June 13, 2018
The initial stages of ZnO atomic layer deposition on atomically flat In<sub>0.53</sub>Ga<sub>0.47</sub>As substratesEvgeniy V Skopin, Laetitia Rapenne, Hervé Roussel, et al.Pageof 2