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Micromachines|March 26, 2022
Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume IIGiovanni VerzellesiMicromachines|December 23, 2022
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G ApplicationsNicolò Zagni, Giovanni Verzellesi, Alessandro ChiniMicromachines|July 2, 2021
On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTsNicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, et al.Nanomaterials (Basel, Switzerland)|October 14, 2022
High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon DevicesFrancesca Peverini, Marco Bizzarri, Maurizio Boscardin, et al.Nanomaterials (Basel, Switzerland)|October 15, 2024
Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical PerformanceFrancesca Peverini, Saba Aziz, Aishah Bashiri, et al.Pageof 1