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Giuseppe Iannaccone

Showing results (1-10 of 28) with videos related to

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Physical Review Letters|February 9, 2005
Effect of dephasing on the current statistics of mesoscopic devicesMarco G Pala, Giuseppe Iannaccone
Nano Letters|October 9, 2010
Electric field control of spin rotation in bilayer graphenePaolo Michetti, Patrik Recher, Giuseppe Iannaccone
Scientific Reports|October 21, 2014
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devicesDemetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|February 17, 2017
Temperature Compensation of Silicon Lamé Resonators Using Etch Holes: Theory and Design MethodologyLuca Luschi, Giuseppe Iannaccone, Francesco Pieri
Scientific Reports|September 30, 2015
Vertical transport in graphene-hexagonal boron nitride heterostructure devicesSamantha Bruzzone, Demetrio Logoteta, Gianluca Fiori, et al.
ACS Nano|March 1, 2012
Lateral graphene-hBCN heterostructures as a platform for fully two-dimensional transistorsGianluca Fiori, Alessandro Betti, Samantha Bruzzone, et al.
Nature Nanotechnology|May 24, 2018
Publisher Correction: Quantum engineering of transistors based on 2D materials heterostructuresGiuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo, et al.
Nature Nanotechnology|March 8, 2018
Quantum engineering of transistors based on 2D materials heterostructuresGiuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo, et al.
Scientific Reports|September 17, 2021
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe<sub>2</sub> via Ab initio modelling of interfacesGaetano Calogero, Damiano Marian, Enrique G Marin, et al.
Journal of Computational Electronics|October 16, 2023
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suiteDamiano Marian, Enrique G Marin, Marta Perucchini, et al.
Pageof 3

Showing results (1-10 of 28) with videos related to

Sort By:
Pageof 3
Physical Review Letters|February 9, 2005
Effect of dephasing on the current statistics of mesoscopic devicesMarco G Pala, Giuseppe Iannaccone
Nano Letters|October 9, 2010
Electric field control of spin rotation in bilayer graphenePaolo Michetti, Patrik Recher, Giuseppe Iannaccone
Scientific Reports|October 21, 2014
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devicesDemetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|February 17, 2017
Temperature Compensation of Silicon Lamé Resonators Using Etch Holes: Theory and Design MethodologyLuca Luschi, Giuseppe Iannaccone, Francesco Pieri
Scientific Reports|September 30, 2015
Vertical transport in graphene-hexagonal boron nitride heterostructure devicesSamantha Bruzzone, Demetrio Logoteta, Gianluca Fiori, et al.
ACS Nano|March 1, 2012
Lateral graphene-hBCN heterostructures as a platform for fully two-dimensional transistorsGianluca Fiori, Alessandro Betti, Samantha Bruzzone, et al.
Nature Nanotechnology|May 24, 2018
Publisher Correction: Quantum engineering of transistors based on 2D materials heterostructuresGiuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo, et al.
Nature Nanotechnology|March 8, 2018
Quantum engineering of transistors based on 2D materials heterostructuresGiuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo, et al.
Scientific Reports|September 17, 2021
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe<sub>2</sub> via Ab initio modelling of interfacesGaetano Calogero, Damiano Marian, Enrique G Marin, et al.
Journal of Computational Electronics|October 16, 2023
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suiteDamiano Marian, Enrique G Marin, Marta Perucchini, et al.
Pageof 3