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Physical Chemistry Chemical Physics : PCCP|July 26, 2008
Stability of singly hydrated silanone on silicon quantum dot surfaces: density functional simulationsR J Eyre, J P Goss, R M MacLeod, et al.
Physical Review Letters|October 4, 2000
Hydrogen interaction with dislocations in SiEwels, Leoni, Heggie, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 22, 2021
Structure and electron affinity of the 4H-SiC (0001) surfaces: a methodological approach for polar systemsJ M A Beattie, J P Goss, M J Rayson, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 28, 2019
Silicon and germanium terminated (0 0 1)-(2 [Formula: see text] 1) diamond surfaceJ M A Beattie, J P Goss, M J Rayson, et al.
Physical Review Letters|July 15, 2003
Z1/Z2 defects in 4H-SiCT A G Eberlein, R Jones, P R Briddon
Journal of Physics. Condensed Matter : an Institute of Physics Journal|January 15, 2013
Hyperfine interactions at nitrogen interstitial defects in diamondM K Atumi, J P Goss, P R Briddon, et al.
Inorganic Chemistry|March 25, 2009
Structure and vibrational properties of oxohalides of vanadiumVincent Guiot, Irene Suarez-Martinez, Philipp Wagner, et al.
Physical Chemistry Chemical Physics : PCCP|July 20, 2016
Surface-state dependent optical properties of OH-, F-, and H-terminated 4H-SiC quantum dotsMarzaini Rashid, Amit K Tiwari, J P Goss, et al.
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