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Nature Communications
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May 16, 2019
Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes
Ting Lei, Lei-Lai Shao, Yu-Qing Zheng, et al.
Science (New York, N.Y.)
|
November 16, 2016
MoS2 transistors with 1-nanometer gate lengths
Sujay B Desai, Surabhi R Madhvapathy, Angada B Sachid, et al.
ACS Applied Materials & Interfaces
|
February 22, 2022
Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth
Zichen Zhang, Matthias Passlack, Gregory Pitner, et al.
Nano Letters
|
March 3, 2025
Overcoming the Leakage and Contact Resistance Challenges in Highly Scaled PMOS and NMOS Carbon Nanotube Transistors
Hsin-Yuan Chiu, Nathaniel Safron, Matthias Passlack, et al.
Nature
|
May 13, 2021
Ultralow contact resistance between semimetal and monolayer semiconductors
Pin-Chun Shen, Cong Su, Yuxuan Lin, et al.
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Search research articles
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Showing results (11-20 of 15) with videos related to
Sort By:
Page
of 2
You have reached the last page of results.
This site can display upto 15 results.
Nature Communications
|
May 16, 2019
Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes
Ting Lei, Lei-Lai Shao, Yu-Qing Zheng, et al.
Science (New York, N.Y.)
|
November 16, 2016
MoS2 transistors with 1-nanometer gate lengths
Sujay B Desai, Surabhi R Madhvapathy, Angada B Sachid, et al.
ACS Applied Materials & Interfaces
|
February 22, 2022
Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth
Zichen Zhang, Matthias Passlack, Gregory Pitner, et al.
Nano Letters
|
March 3, 2025
Overcoming the Leakage and Contact Resistance Challenges in Highly Scaled PMOS and NMOS Carbon Nanotube Transistors
Hsin-Yuan Chiu, Nathaniel Safron, Matthias Passlack, et al.
Nature
|
May 13, 2021
Ultralow contact resistance between semimetal and monolayer semiconductors
Pin-Chun Shen, Cong Su, Yuxuan Lin, et al.
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of 2