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RSC Advances|April 15, 2022
Enhanced negative magnetoresistance near the charge neutral point in Cr doped topological insulatorQixun Guo, Yu Wu, Dongwei Wang, et al.ACS Applied Materials & Interfaces|March 5, 2016
Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L10-FePt Films via Nonelectrically Controlled Strain EngineeringChun Feng, Jiancheng Zhao, Feng Yang, et al.Scientific Reports|February 3, 2016
Nonvolatile modulation of electronic structure and correlative magnetism of L10-FePt films using significant strain induced by shape memory substratesChun Feng, Jiancheng Zhao, Feng Yang, et al.Materials Horizons|November 30, 2021
Photopolymerized superhydrophobic hybrid coating enabled by dual-purpose tetrapodal ZnO for liquid/liquid separationChenxuan Li, Brian Lee, Chenxu Wang, et al.ACS Applied Materials & Interfaces|March 8, 2023
Local Manipulation of Skyrmion Nucleation in Microscale Areas of a Thin Film with Nitrogen-Ion ImplantationYongkang Zhao, Junlin Wang, Lianxin Xu, et al.Nature Communications|July 19, 2020
Electric-field-driven non-volatile multi-state switching of individual skyrmions in a multiferroic heterostructureYadong Wang, Lei Wang, Jing Xia, et al.Nano Letters|August 12, 2024
Initialization-Free and Magnetic Field-Free Spin-Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic ApplicationsRuizhi Ren, Yi Cao, Chao Wang, et al.Advanced Materials (Deerfield Beach, Fla.)|December 30, 2021
Controlled Switching of the Number of Skyrmions in a Magnetic Nanodot by Electric FieldsZhipeng Hou, Yadong Wang, Xiaoming Lan, et al.Pageof 3