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Advanced Materials (Deerfield Beach, Fla.)|April 22, 2024
Boltzmann Switching MoS<sub>2</sub> Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott LimitYeon Ho Kim, Wei Jiang, Donghun Lee, et al.
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Showing results (61-70 of 61) with videos related to

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Pageof 7
You have reached the last page of results.This site can display upto 61 results.
Advanced Materials (Deerfield Beach, Fla.)|April 22, 2024
Boltzmann Switching MoS<sub>2</sub> Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott LimitYeon Ho Kim, Wei Jiang, Donghun Lee, et al.
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