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Materials (Basel, Switzerland)|September 28, 2023
The Influence of Special Environments on SiC MOSFETsZhigang Li, Jie Jiang, Zhiyuan He, et al.Micromachines|December 23, 2022
The Electrical and Thermal Characteristics of Stacked GaN MISHEMTCaixin Hui, Qiuqi Chen, Yijun Shi, et al.Materials (Basel, Switzerland)|February 25, 2023
Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMTJie Jiang, Qiuqi Chen, Shengdong Hu, et al.Micromachines|December 31, 2025
The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate ConditionZhipeng Shen, Yijun Shi, Lijuan Wu, et al.Frontiers in Pharmacology|August 8, 2022
Development and validation of a hypoxia-stemness-based prognostic signature in pancreatic adenocarcinomaXiong Tian, Jing Zheng, Wanlan Mou, et al.Micromachines|January 21, 2022
A Novel Bidirectional AlGaN/GaN ESD Protection DiodeBin Yao, Yijun Shi, Hongyue Wang, et al.Nanophotonics (Berlin, Germany)|December 5, 2024
High performance multifunction-in-one optoelectronic device by integrating graphene/MoS2 heterostructures on side-polished fiberLinqing Zhuo, Dongquan Li, Weidong Chen, et al.Nanomaterials (Basel, Switzerland)|January 11, 2022
Gold Enhanced Graphene-Based Photodetector on Optical Fiber with Ultrasensitivity over Near-Infrared BandsWenguo Zhu, Songqing Yang, Huadan Zheng, et al.Pageof 3