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Biochemistry Research International|July 12, 2018
Postrecruitment Function of Yeast Med6 Protein during the Transcriptional Activation by Mediator ComplexGwang Sik Kim, Young Chul LeeMolecules and Cells|August 30, 2018
OPTHiS Identifies the Molecular Basis of the Direct Interaction between CSL and SMRT CorepressorGwang Sik Kim, Hee-Sae Park, Young Chul LeePlos One|July 11, 2015
Mutagenesis Study Reveals the Rim of Catalytic Entry Site of HDAC4 and -5 as the Major Binding Surface of SMRT CorepressorGwang Sik Kim, Ha-Eun Jung, Jeong-Sun Kim, et al.Molecular and Cellular Biology|December 12, 2007
Functional conservation of the glutamine-rich domains of yeast Gal11 and human SRC-1 in the transactivation of glucocorticoid receptor Tau 1 in Saccharomyces cerevisiaeDae-Hwan Kim, Gwang Sik Kim, Chul Ho Yun, et al.Optics Letters|August 13, 2016
Asymmetrically contacted germanium photodiode using a metal-interlayer-semiconductor-metal structure for extremely large dark current suppressionHwan-Jun Zang, Gwang-Sik Kim, Gil-Jae Park, et al.The Biochemical Journal|November 23, 2007
RXR heterodimerization allosterically activates LXR binding to the second NR box of activating signal co-integrator-2You Lee Son, Ok Gu Park, Gwang Sik Kim, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|July 1, 2021
Steep-Slope Gate-Connected Atomic Threshold Switching Field-Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable PhototransistorsSeung-Geun Kim, Seung-Hwan Kim, Gwang-Sik Kim, et al.ACS Applied Materials & Interfaces|December 15, 2016
The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity ReductionSun-Woo Kim, Seung-Hwan Kim, Gwang-Sik Kim, et al.ACS Nano|June 1, 2018
Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap StatesGwang-Sik Kim, Seung-Hwan Kim, June Park, et al.ACS Applied Materials & Interfaces|January 22, 2019
Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact StructureSeung-Hwan Kim, Kyu Hyun Han, Gwang-Sik Kim, et al.Pageof 2