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Höchst

Showing results (1-10 of 61) with videos related to

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Physical Review. B, Condensed Matter|January 15, 1993
Observation of strain-induced splitting of degenerate valence bands using angle-resolved photoemission spectroscopyRioux, Höchst
Physical Review. B, Condensed Matter|September 15, 1992
Sb/InP(100) interface: A precursor to surfactant-mediated Ge epitaxyRioux, Höchst
Physical Review. B, Condensed Matter|June 15, 1990
Band offsets and interfacial properties of cubic CdS grown by molecular-beam epitaxy on CdTe(110)Niles, Höchst
Physical Review. B, Condensed Matter|July 15, 1992
Determination of the bowing parameter of the split-off band in Cd0.8Zn0.2Te(100) by angle-resolved photoemission spectroscopyNiles, Höchst
Physical Review. B, Condensed Matter|April 15, 1989
Electronic structure of the Si/GaP(110) interfaceNiles, Höchst
Physical Review. B, Condensed Matter|January 15, 1991
Critical test of CdTe(100) angle-resolved photoemission spectra with band-structure calculationsNiles, Höchst
Physical Review. B, Condensed Matter|November 15, 1991
Strain-induced changes in the electronic valence-band structure of a cubic CdS(100) filmNiles, Höchst
Physical Review. B, Condensed Matter|March 15, 1992
Structural and electronic properties of strained Ge/InP(100) heterostructuresRioux, Patel, Höchst
Physical Review. B, Condensed Matter|May 15, 1985
Photoemission study of the hydrogenation of the intermetallic compounds YFe3 and YFe2Höchst, Colavita, Buschow
Physical Review. B, Condensed Matter|January 15, 1985
Dielectric function of alpha -Sn and its temperature dependenceVia, Höchst, Cardona
Pageof 7

Showing results (1-10 of 61) with videos related to

Sort By:
Pageof 7
Physical Review. B, Condensed Matter|January 15, 1993
Observation of strain-induced splitting of degenerate valence bands using angle-resolved photoemission spectroscopyRioux, Höchst
Physical Review. B, Condensed Matter|September 15, 1992
Sb/InP(100) interface: A precursor to surfactant-mediated Ge epitaxyRioux, Höchst
Physical Review. B, Condensed Matter|June 15, 1990
Band offsets and interfacial properties of cubic CdS grown by molecular-beam epitaxy on CdTe(110)Niles, Höchst
Physical Review. B, Condensed Matter|July 15, 1992
Determination of the bowing parameter of the split-off band in Cd0.8Zn0.2Te(100) by angle-resolved photoemission spectroscopyNiles, Höchst
Physical Review. B, Condensed Matter|April 15, 1989
Electronic structure of the Si/GaP(110) interfaceNiles, Höchst
Physical Review. B, Condensed Matter|January 15, 1991
Critical test of CdTe(100) angle-resolved photoemission spectra with band-structure calculationsNiles, Höchst
Physical Review. B, Condensed Matter|November 15, 1991
Strain-induced changes in the electronic valence-band structure of a cubic CdS(100) filmNiles, Höchst
Physical Review. B, Condensed Matter|March 15, 1992
Structural and electronic properties of strained Ge/InP(100) heterostructuresRioux, Patel, Höchst
Physical Review. B, Condensed Matter|May 15, 1985
Photoemission study of the hydrogenation of the intermetallic compounds YFe3 and YFe2Höchst, Colavita, Buschow
Physical Review. B, Condensed Matter|January 15, 1985
Dielectric function of alpha -Sn and its temperature dependenceVia, Höchst, Cardona
Pageof 7